FZT549TA Diodes Incorporated

FZT549TA electronic component of Diodes Incorporated
FZT549TA Diodes Incorporated
FZT549TA Bipolar Transistors - BJT
FZT549TA  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of FZT549TA Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. FZT549TA Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. FZT549TA
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 30 V 1 A 100MHz 2 W Surface Mount SOT-223-3
Datasheet: FZT549TA Datasheet (PDF)
Price (USD)
1: USD 1.0987 ea
Line Total: USD 1.1 
Availability : 5173
  
Ship by Wed. 03 Sep to Fri. 05 Sep
QtyUnit Price
1$ 1.0987
10$ 0.6875
100$ 0.4004
500$ 0.3223
1000$ 0.2959
2000$ 0.2629
5000$ 0.2519
10000$ 0.2486

Availability 5173
Ship by Wed. 03 Sep to Fri. 05 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.0987
10$ 0.6875
100$ 0.4004
500$ 0.3223
1000$ 0.2959
2000$ 0.2629
5000$ 0.2519
10000$ 0.2486


Availability 87300
Ship by Fri. 05 Sep to Thu. 11 Sep
MOQ : 1000
Multiples : 1000
QtyUnit Price
1000$ 0.2763

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FZT549TA from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FZT549TA and other electronic components in the Bipolar Transistors - BJT category and beyond.

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A Product Line of Diodes Incorporated Green FZT549 30V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data BV > -30V CEO Case: SOT223 I = -1A High Continuous Current C Case Material: Molded Plastic. Green Molding Compound Excellent h Characteristics up to -2A FE UL Flammability Rating 94V-0 Low Saturation Voltage V < -0.5V -1A CE(sat) Moisture Sensitivity: Level 1 per J-STD-020 Lead-Free Finish RoHS Compliant (Notes 1 & 2) Terminals: Finish - Matte Tin Plated Leads Solderable per MIL- Halogen and Antimony Free. Green Device (Note 3) STD-202, Method 208 Qualified to AEC-Q101 Standards for High Reliability Weight: 0.112 grams (Approximate) SOT223 C B E Top View Top View Device Symbol Pin-Out Ordering Information (Note 4) Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel FZT549TA AEC-Q101 FZT549 7 12 1,000 Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See A Product Line of Diodes Incorporated FZT549 Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V -35 V CBO Collector-Emitter Voltage -30 V V CEO Emitter-Base Voltage -7 V V EBO Continuous Collector Current -1 A I C Peak Pulse Current -2 A I CM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit (Note 5) 2 W Power Dissipation P D (Note 6) 3 W (Note 5) 62.5 C/W Thermal Resistance, Junction to Ambient R JA (Note 6) 41.7 C/W Thermal Resistance, Junction to Leads (Note 7) 19.4 C/W R JL Operating and Storage Temperature Range -55 to +150 C T T J, STG ESD Ratings (Note 8) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 5. For a device mounted with the collector lead on 25mm x 25mm 2oz copper that is on a single-sided 1.6mm FR4 PCB device is measured under still air conditions whilst operating in a steady-state. 6. Same as Note 5, except the device is mounted on 50mm x 50mm single sided 2oz weight copper. 7. Thermal resistance from junction to solder-point (at the end of the collector lead). 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 FZT549 June 2015 Diodes Incorporated www.diodes.com Document number: DS33138 Rev.3 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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