FZT560TC Diodes Incorporated

FZT560TC electronic component of Diodes Incorporated
FZT560TC Diodes Incorporated
FZT560TC Bipolar Transistors - BJT
FZT560TC  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of FZT560TC Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. FZT560TC Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. FZT560TC
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Diodes Incorporated Bipolar Transistors - BJT PNP High V 500V
Datasheet: FZT560TC Datasheet (PDF)
Price (USD)
4000: USD 0.3325 ea
Line Total: USD 1330 
Availability : 0
  
QtyUnit Price
4000$ 0.3325

Availability 11640
Ship by Mon. 24 Nov to Fri. 28 Nov
MOQ : 4000
Multiples : 4000
QtyUnit Price
4000$ 0.3325

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Height
Length
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FZT560TC from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FZT560TC and other electronic components in the Bipolar Transistors - BJT category and beyond.

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A Product Line of Diodes Incorporated Green FZT560 53 500V PNP HIGH VOLTAGE TRANSISTOR IN SOT223 Features Mechanical Data BV > -500V Case: SOT223 CEO I = -150mA High Continuous Current C Case Material: Molded Plastic. Green Molding Compound I = -500mA Peak Pulse Current CM UL Flammability Rating 94V-0 Lead-Free Finish RoHS Compliant (Notes 1 & 2) Moisture Sensitivity: Level 1 per J-STD-020 Halogen and Antimony Free. Green Device (Note 3) Terminals: Finish - Matte Tin Plated Leads Solderable per MIL- Qualified to AEC-Q101 Standards for High Reliability STD-202, Method 208 PPAP Capable (Note 4) Weight: 0.112 grams (Approximate) SOT223 C E B C C B E Top View Top View Device Symbol Pin-Out Ordering Information (Notes 4 & 5) Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel FZT560TA AEC-Q101 FZT560 7 12 1,000 FZT560QTA Automotive FZT560 7 12 1,000 FZT560TC AEC-Q101 FZT560 13 12 4,000 FZT560QTC Automotive FZT560 13 12 4,000 Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See A Product Line of Diodes Incorporated FZT560 53 Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V -500 V CBO Collector-Emitter Voltage V -500 V CEO Emitter-Base Voltage V -7 V EBO Continuous Collector Current I -150 mA C Peak Pulse Current I -500 mA CM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit (Note 6) 2 W Power Dissipation P D (Note 7) 3 W (Note 6) 62.5 C/W Thermal Resistance, Junction to Ambient R JA (Note 7) 41.7 C/W Thermal Resistance, Junction to Leads (Note 8) R 14.8 C/W JL Operating and Storage Temperature Range T T -55 to +150 C J, STG ESD Ratings (Note 9) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 6. For a device mounted with the collector lead on 25mm x 25mm 2oz copper that is on a single-sided 1.6mm FR4 PCB device is measured under still air conditions whilst operating in steady-state. 7. Same as Note 6, except the device is mounted on 50mm x 50mm 2oz copper. 8. Thermal resistance from junction to solder-point (at the end of the collector lead). 9. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 FZT560 March 2015 Diodes Incorporated www.diodes.com Document Number DS33140 Rev. 3 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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