FZT651QTC Diodes Incorporated

FZT651QTC electronic component of Diodes Incorporated
FZT651QTC Diodes Incorporated
FZT651QTC Bipolar Transistors - BJT
FZT651QTC  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of FZT651QTC Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. FZT651QTC Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. FZT651QTC
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT Pwr Mid Perf Transistor SOT223 T&R 4K
Datasheet: FZT651QTC Datasheet (PDF)
Price (USD)
1: USD 1.2362 ea
Line Total: USD 1.24 
Availability : 4700
  
Ship by Mon. 01 Sep to Wed. 03 Sep
QtyUnit Price
1$ 1.2362
10$ 0.7687
100$ 0.4554
500$ 0.3674
1000$ 0.3366
2000$ 0.3113
4000$ 0.2926

Availability 4700
Ship by Mon. 01 Sep to Wed. 03 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.2362
10$ 0.7687
100$ 0.4554
500$ 0.3674
1000$ 0.3366
2000$ 0.3113
4000$ 0.2926

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FZT651QTC from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FZT651QTC and other electronic components in the Bipolar Transistors - BJT category and beyond.

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A Product Line of Diodes Incorporated Green FZT651Q 60V NPN HIGH PERFORMANCE TRANSISTOR IN SOT223 Description Mechanical Data This Bipolar Junction Transistor (BJT) has been designed to meet the Case: SOT223 stringent requirements of automotive applications. Case Material: Molded Plastic. Green Molding Compound UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Features Terminals: Finish - Matte Tin Plated Leads Solderable per BV > 60V MIL-STD-202, Method 208 CEO I = 3A High Continuous Current Weight: 0.112 grams (Approximate) C I = 6A Peak Pulse Current CM Low Saturation Voltage V < 300mV 1A CE(sat) Complementary PNP Type: FZT751Q Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) SOT223 Top View Device Symbol Pin-Out Top View Ordering Information (Notes 4 & 5) Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel FZT651QTA Automotive FZT651 7 12 1,000 FZT651QTC Automotive FZT651 13 12 4,000 Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See A Product Line of Diodes Incorporated FZT651Q Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage 80 V V CBO Collector-Emitter Voltage 60 V V CEO Emitter-Base Voltage 7 V V EBO Continuous Collector Current I 3 A C Peak Pulse Current I 6 A CM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit (Note 6) 2 W Power Dissipation P D (Note 7) 3 W (Note 6) 62.5 C/W Thermal Resistance, Junction to Ambient R JA (Note 7) 41.7 C/W Thermal Resistance, Junction to Leads (Note 8) 12.9 C/W R JL Operating and Storage Temperature Range T T -55 to +150 C J, STG ESD Ratings (Note 9) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3a Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 6. For a device mounted with the collector lead on 25mm x 25mm 2oz copper that is on a single-sided 1.6mm FR4 PCB device is measured under still air conditions whilst operating in steady-state. 7. Same as Note 6, except the device is mounted on 50mm x 50mm 2oz copper. 8. Thermal resistance from junction to solder-point (at the end of the collector lead). 9. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 FZT651Q March 2015 Diodes Incorporated www.diodes.com Document Number DS36917 Rev. 2 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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