FZT655TA Diodes Incorporated

FZT655TA electronic component of Diodes Incorporated
FZT655TA Diodes Incorporated
FZT655TA Bipolar Transistors - BJT
FZT655TA  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of FZT655TA Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. FZT655TA Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. FZT655TA
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 150 V 1 A 30MHz 2 W Surface Mount SOT-223-3
Datasheet: FZT655TA Datasheet (PDF)
Price (USD)
1: USD 1.1513 ea
Line Total: USD 1.15 
Availability : 2199
  
Ship by Wed. 03 Sep to Fri. 05 Sep
QtyUnit Price
1$ 1.1513
10$ 0.665
100$ 0.3982
500$ 0.3223
1000$ 0.3014
2000$ 0.2739
5000$ 0.264

Availability 2199
Ship by Wed. 03 Sep to Fri. 05 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.1513
10$ 0.665
100$ 0.3982
500$ 0.3223
1000$ 0.3014
2000$ 0.2739
5000$ 0.264


Availability 7760
Ship by Fri. 05 Sep to Thu. 11 Sep
MOQ : 867
Multiples : 1
QtyUnit Price
867$ 0.3002


Availability 33
Ship by Wed. 03 Sep to Fri. 05 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.064
10$ 0.8316
42$ 0.4634
114$ 0.4382
500$ 0.434

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Category
Brand Category
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FZT655TA from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FZT655TA and other electronic components in the Bipolar Transistors - BJT category and beyond.

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A Product Line of Diodes Incorporated Green FZT655 150V NPN MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data BV > 150V Case: SOT223 CEO I = 1A High Continuous Current Case Material: Molded Plastic. Green Molding Compound C Low Saturation Voltage UL Flammability Rating 94V-0 Complementary PNP Type FZT755 Moisture Sensitivity: Level 1 per J-STD-020 Lead-Free Finish RoHS Compliant (Notes 1 & 2) Terminals: Finish - Matte Tin Plated Leads Solderable per Halogen and Antimony Free. Green Device (Note 3) MIL-STD-202, Method 208 Qualified to AEC-Q101 Standards for High Reliability Weight: 0.112 grams (Approximate) SOT223 Top View Top View Device Symbol Pin-Out Ordering Information (Note 4) Product Marking Reel size (inches) Tape width (mm) Quantity per reel FZT655TA FZT655 7 12 1,000 Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See A Product Line of Diodes Incorporated FZT655 Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage 150 V V CBO Collector-Emitter Voltage 150 V V CEO Emitter-Base Voltage 7 V V EBO Continuous Collector Current 1 A I C Peak Pulse Current I 2 A CM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit (Note 5) 2 W Power Dissipation P D (Note 6) 3 W (Note 5) 62.5 C/W Thermal Resistance, Junction to Ambient R JA (Note 6) 41.7 C/W Thermal Resistance, Junction to Leads (Note 7) 19.41 C/W R JL Operating and Storage Temperature Range T T -55 to +150 C J, STG ESD Ratings (Note 8) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 5. For a device mounted with the collector lead on 25mm X 25mm 2oz copper that is on a single-sided 1.6mm FR4 PCB device is measured under still air conditions whilst operating in a steady-state. 6. Same as Note 5, except the device is mounted on 50mm X 50mm single sided 2oz copper. 7. Thermal resistance from junction to solder-point (at the end of the collector lead). 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 March 2015 FZT655 Diodes Incorporated www.diodes.com Document Number DS33151 Rev. 5 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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