FZT694BTA Diodes Incorporated

FZT694BTA electronic component of Diodes Incorporated
FZT694BTA Diodes Incorporated
FZT694BTA Bipolar Transistors - BJT
FZT694BTA  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of FZT694BTA Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. FZT694BTA Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. FZT694BTA
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Diodes Incorporated Bipolar Transistors - BJT NPN High Gain & Crnt
Datasheet: FZT694BTA Datasheet (PDF)
Price (USD)
1: USD 1.5625 ea
Line Total: USD 1.56 
Availability : 4440
  
Ship by Mon. 01 Sep to Wed. 03 Sep
QtyUnit Price
1$ 1.5625
10$ 0.9456
100$ 0.5357
500$ 0.4455
1000$ 0.3465

Availability 103790
Ship by Wed. 03 Sep to Tue. 09 Sep
MOQ : 1000
Multiples : 1000
QtyUnit Price
1000$ 0.3575


Availability 4440
Ship by Mon. 01 Sep to Wed. 03 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.5625
10$ 0.9456
100$ 0.5357
500$ 0.4455
1000$ 0.3465


Availability 449
Ship by Wed. 10 Sep to Mon. 15 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.9436
10$ 0.7744
30$ 0.5154
100$ 0.4067
500$ 0.3731
1000$ 0.3546


Availability 227
Ship by Mon. 01 Sep to Wed. 03 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.624
10$ 1.0234
40$ 0.4816
109$ 0.455
1000$ 0.4452

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Continuous Collector Current
Power Dissipation
Dc Collector/Base Gain Hfe Min
Maximum Collector Cut-Off Current
Factory Pack Quantity :
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FZT694BTA from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FZT694BTA and other electronic components in the Bipolar Transistors - BJT category and beyond.

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FZT69 4B Green 120V NPN MEDIUM POWER HIGH GAIN TRANSISTOR IN SOT223 Features Mechanical Data BV > 120V Case: SOT223 CEO BV > 120V Case Material: Molded Plastic, Green Molding Compound. CBO I = 1A Continuous Current UL Flammability Rating 94V-0 C hFE > 400 for High Gain 0.2A Moisture Sensitivity: Level 1 per J-STD-020 Very Low Saturation Voltage Terminals: Finish - Matte Tin Plated Leads. Complementary PNP Type: FZT795A Solderable per MIL-STD-202, Method 208 Lead-Free Finish RoHS Compliant (Notes 1 & 2) Weight: 0.112 grams (Approximate) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Applications Darlington Replacement Relay and Solenoid Driver C SOT223 E B C C B E Top View Top View Device Symbol Pin-Out Ordering Information (Notes 4) Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel FZT694BTA AEC-Q101 FZT694B 7 12 1,000 Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See FZT694B Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V 120 V CBO Collector-Emitter Voltage 120 V VCEO Emitter-Base Voltage 7 V V EBO Continuous Collector Current 1 A I C Peak Pulse Current 2 A I CM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit (Note 5) 3.0 (Note 6) 2.0 Power Dissipation W P D (Note 7) 1.6 (Note 8) 1.2 (Note 5) 41.7 (Note 6) 62.5 Thermal Resistance, Junction to Ambient R JA (Note 7) 78.1 C/W (Note 8) 104 Thermal Resistance Junction to Lead (Note 9) 12.9 R JL Operating and Storage Temperature Range -55 to +150 C T T J, STG ESD Ratings (Note 10) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 5. For a device mounted with the collector lead on 50mm x 50mm 2oz copper that is on a single-sided 1.6mm FR4 PCB device is measured under still air conditions whilst operating in a steady-state. 6. Same as Note 6, except the device is mounted on 25mm x 25mm 2oz copper. 7. Same as Note 6, except the device is mounted on 25mm x 25mm 1oz copper. 8. Same as Note 6, except the device is mounted on minimum recommended pad layout. 9. Thermal resistance from junction to solder-point (at the end of the collector lead). 10. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 FZT694B January 2016 Diodes Incorporated www.diodes.com Document number: DS33158 Rev. 4 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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