A Product Line of Diodes Incorporated Green FZT749 25V PNP HIGH PERFORMANCE TRANSISTOR IN SOT223 Features Mechanical Data BV > -25V Case: SOT223 CEO I = -3A High Continuous Current Case Material: Molded Plastic. Green Molding Compound C I = -8A Peak Pulse Current UL Flammability Rating 94V-0 CM Low Saturation Voltage V < -300mV -1A Moisture Sensitivity: Level 1 per J-STD-020 CE(sat) Complementary NPN Type: FZT649 Terminals: Finish - Matte Tin Plated Leads Solderable per Lead-Free Finish RoHS Compliant (Notes 1 & 2) MIL-STD-202, Method 208 Halogen and Antimony Free. Green Device (Note 3) Weight: 0.112 grams (Approximate) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Applications MOSFET and IGBT Gate Driving SOT223 C E B C C B E Top View Top View Device Symbol Pin-Out Ordering Information (Notes 4 & 5) Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel FZT749TA AEC-Q101 FZT749 7 12 1,000 FZT749QTA Automotive FZT749 7 12 1,000 FZT749TC AEC-Q101 FZT749 13 12 4,000 FZT749QTC Automotive FZT749 13 12 4,000 Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See A Product Line of Diodes Incorporated FZT749 Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V -35 V CBO Collector-Emitter Voltage V -25 V CEO Emitter-Base Voltage -7 V V EBO Continuous Collector Current -3 A I C Peak Pulse Current -8 A I CM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit (Note 6) 3.0 (Note 7) 2.0 Power Dissipation P W D (Note 8) 1.6 (Note 9) 1.2 (Note 6) 41.7 (Note 7) 62.5 Thermal Resistance, Junction to Ambient R JA (Note 8) 78.1 C/W (Note 9) 104 Thermal Resistance Junction to Lead (Note 10) 12.9 R JL Operating and Storage Temperature Range T T -55 to +150 C J, STG ESD Ratings (Note 9) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 6. For a device mounted with the collector lead on 50mm x 50mm 2oz copper that is on a single-sided 1.6mm FR4 PCB device is measured under still air conditions whilst operating in a steady-state. 7. Same as Note 6, except the device is mounted on 25mm x 25mm 2oz copper. 8. Same as Note 6, except the device is mounted on 25mm x 25mm 1oz copper. 9. Same as Note 6, except the device is mounted on minimum recommended pad layout. 10. Thermal resistance from junction to solder-point (at the end of the collector lead). 11. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 FZT749 June 2015 Diodes Incorporated www.diodes.com Document Number DS33162 Rev. 6 - 2