X-On Electronics has gained recognition as a prominent supplier of FZT851QTA Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. FZT851QTA Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

FZT851QTA Diodes Incorporated

FZT851QTA electronic component of Diodes Incorporated
FZT851QTA Diodes Incorporated
FZT851QTA Bipolar Transistors - BJT
FZT851QTA  Semiconductors

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See Product Specifications
Part No. FZT851QTA
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT 400V NPN Med PWR 100mA 200mV 20A
Datasheet: FZT851QTA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.0656 ea
Line Total: USD 2.07 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 27 Jun to Wed. 02 Jul
MOQ : 1
Multiples : 1
1 : USD 2.4251
10 : USD 1.9275
30 : USD 1.7144
100 : USD 1.4484
500 : USD 1.3301
1000 : USD 1.2589

0
Ship by Wed. 18 Jun to Fri. 20 Jun
MOQ : 1
Multiples : 1
1 : USD 2.0656
10 : USD 1.2765
100 : USD 0.8123
500 : USD 0.6748
1000 : USD 0.6498
2000 : USD 0.5896
5000 : USD 0.568
25000 : USD 0.5533

0
Ship by Fri. 20 Jun to Thu. 26 Jun
MOQ : 1000
Multiples : 1000
1000 : USD 0.625

0
Ship by Fri. 20 Jun to Thu. 26 Jun
MOQ : 1000
Multiples : 1000
1000 : USD 0.65

0
Ship by Fri. 20 Jun to Thu. 26 Jun
MOQ : 1000
Multiples : 1000
1000 : USD 0.65

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FZT851QTA from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FZT851QTA and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Green FZT851 60V NPN MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data BV > 60V Case: SOT223 Type DN CEO I = 6A High Continuous Collector Current Case Material: Molded Plastic, Green Molding Compound. C I = 20A Peak Pulse Current UL Flammability Rating 94V-0 CM Low Saturation Voltage V < 100mV 1A Moisture Sensitivity: Level 1 per J-STD-020 CE(sat) R = 44m for a Low Equivalent On-Resistance Terminals: Finish - Matte Tin Plated Leads. Solderable per CE(sat) h Specified Up to 10A for a High Gain Hold Up MIL-STD-202, Method 208 FE Complementary PNP Type: FZT951 Weight: 0.112 grams (Approximate) Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) The FZT851Q is suitable for automotive applications requiring specific change control this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities. FZT851 Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V 150 V CBO Collector-Emitter Voltage V 60 V CEO Emitter-Base Voltage V 7 V EBO Continuous Collector Current I 6 A C Peak Pulse Current 20 A I CM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit 3.0 (Note 5) Power Dissipation 24 W P D Linear Derating Factor mW/C 1.6 (Note 6) 12.8 (Note 5) 42 R JA Thermal Resistance, Junction to Ambient (Note 6) 78 C/W R JA Thermal Resistance Junction to Lead (Note 7) R 8.8 JL Operating and Storage Temperature Range T T -55 to +150 C J, STG ESD Ratings (Note 8) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 8,000 V 3B Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 5. For a device mounted with the collector lead on 52mm x 52mm 2oz copper that is on a single-sided 1.6mm FR4 PCB device is measured under still air conditions whilst operating in steady-state. 6. Same as Note 6, except the device is mounted on 25mm x 25mm 1oz copper. 7. Thermal resistance from junction to solder-point (at the end of the collector lead). 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 February 2020 FZT851 Diodes Incorporated www.diodes.com Document Number DS33174 Rev. 7 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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