MMBT3906FA-7B Diodes Incorporated

MMBT3906FA-7B electronic component of Diodes Incorporated
MMBT3906FA-7B Diodes Incorporated
MMBT3906FA-7B Bipolar Transistors - BJT
MMBT3906FA-7B  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of MMBT3906FA-7B Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MMBT3906FA-7B Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. MMBT3906FA-7B
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Diodes Incorporated Bipolar Transistors - BJT 40V PNP SM Trans 435mW -40V Vceo
Datasheet: MMBT3906FA-7B Datasheet (PDF)
Price (USD)
1: USD 0.6625 ea
Line Total: USD 0.66 
Availability : 42820
  
Ship by Wed. 30 Jul to Fri. 01 Aug
QtyUnit Price
1$ 0.6625
10$ 0.405
100$ 0.2381
500$ 0.1716
1000$ 0.1375
5000$ 0.121
10000$ 0.0957
20000$ 0.0935

Availability 42820
Ship by Wed. 30 Jul to Fri. 01 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.6625
10$ 0.405
100$ 0.2381
500$ 0.1716
1000$ 0.1375
5000$ 0.121
10000$ 0.0957
20000$ 0.0935


Availability 58200
Ship by Fri. 01 Aug to Thu. 07 Aug
MOQ : 10000
Multiples : 10000
QtyUnit Price
10000$ 0.1095

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Category
Brand Category
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MMBT3906FA-7B from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMBT3906FA-7B and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MMBT3906FA 40V PNP SMALL SIGNAL TRANSISTOR IN DFN0806 Features Mechanical Data BV > -40V Case: X2-DFN0806-3 CEO I = -200mA high Collector Current Case Material: Molded Plastic, Green Molding Compound. C P = 435mW Power Dissipation UL Flammability Classification Rating 94V-0 D 2 package footprint, 16 times smaller than SOT23 0.48mm Moisture Sensitivity: Level 1 per J-STD-020 0.4mm height package minimizing off-board profile Terminals: Finish NiPdAu, Solderable per MIL-STD-202, Complementary NPN Type MMBT3904FA e4 Method 208 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Weight: 0.0008 grams (approximate) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability C X2-DFN0806-3 B B C E E Top View Device Schematic Device Symbol Bottom View Top View Ordering Information (Note 4) Product Marking Reel size (inches) Tape width (mm) Quantity per reel MMBT3906FA-7B 3N 7 8 10,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See MMBT3906FA Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V -40 V CBO Collector-Emitter Voltage V -40 V CEO Emitter-Base Voltage V -6.0 V EBO Continuous Collector Current I -200 mA C Peak Pulse Collector Current I -500 mA CM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 5) P 435 mW D Thermal Resistance, Junction to Ambient (Note 5) 287 C/W R JA Thermal Resistance, Junction to Lead (Note 6) 150 C/W R JL Operating and Storage and Temperature Range -55 to +150 T , T C J STG ESD Ratings (Note 7) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 200 V B Notes: 5. For the device mounted on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB device is measured under still air conditions whilst operating in steady state condition. The entire exposed collector pad is attached to the heatsink. 6. Thermal resistance from junction to solder-point (on the exposed collector pad). 7. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 July 2013 MMBT3906FA Diodes Incorporated www.diodes.com Document number: DS36017 Rev. 1 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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