MMBT3906T PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-523 Complementary NPN Type Available (MMBT3904T) C Dim Min Max Typ Lead Free/RoHS Compliant (Note 2) Gree Device (Note 3 and 4) A 0.15 0.30 0.22 B C TOP VIEW B 0.75 0.85 0.80 Mechanical Data B E C 1.45 1.75 1.60 G Case: SOT-523 D 0.50 H Case Material: Molded Plastic. UL Flammability G 0.90 1.10 1.00 Classification Rating 94V-0 K Moisture Sensitivity: Level 1 per J-STD-020C M N H 1.50 1.70 1.60 Terminals: Solderable per MIL-STD-202, Method 208 J 0.00 0.10 0.05 Lead Free Plating (Matte Tin Finish annealed over J Alloy 42 leadframe) D L K 0.60 0.80 0.75 Terminal Connections: See Diagram C L 0.10 0.30 0.22 Marking Information: 3N, See Page 3 Ordering & Date Code Information: See Page 3 M 0.10 0.20 0.12 Weight: 0.002 grams (approximate) N 0.45 0.65 0.50 0 8 B E All Dimensions in mm Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage V -40 V CBO Collector-Emitter Voltage V -40 V CEO Emitter-Base Voltage V -5.0 V EBO Collector Current - Continuous -200 mA I C Power Dissipation (Note 1) 150 mW P d Thermal Resistance, Junction to Ambient (Note 1) R 833 C/W JA Operating and Storage Temperature Range T , T -55 to +150 C j STG Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Collector-Base Breakdown Voltage -40 V V I = -10A, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage -40 V V I = -1.0mA, I = 0 (BR)CEO C B Emitter-Base Breakdown Voltage -5.0 V V I = -10A, I = 0 (BR)EBO E C Collector Cutoff Current I -50 nA V = -30V, V = -3.0V CEX CE EB(OFF) Base Cutoff Current I -50 nA V = -30V, V = -3.0V BL CE EB(OFF) ON CHARACTERISTICS (Note 5) I = -100A, V = -1.0V C CE 60 I = -1.0mA, V = -1.0V 80 C CE DC Current Gain 100 300 h I = -10mA, V = -1.0V FE C CE 60 I = -50mA, V = -1.0V C CE 30 I = -100mA, V = -1.0V C CE -0.25 I = -10mA, I = -1.0mA C B Collector-Emitter Saturation Voltage V V CE(SAT) -0.40 I = -50mA, I = -5.0mA C B -0.65 -0.85 I = -10mA, I = -1.0mA C B Base-Emitter Saturation Voltage V V BE(SAT) -0.95 I = -50mA, I = -5.0mA C B V = -5.0Vdc, I = 100Adc, CE C Noise Figure NF 4.0 dB R = 1.0k, f = 1.0kHz S SMALL SIGNAL CHARACTERISTICS Output Capacitance C 4.5 pF V = -5.0V, f = 1.0MHz, I = 0 obo CB E Input Capacitance C 10 pF V = -0.5V, f = 1.0MHz, I = 0 ibo EB C Input Impedance h 2.0 12 k ie -4 Voltage Feedback Ratio 0.1 10 x 10 h re V = 1.0V, I = 10mA, CE C f = 1.0kHz Small Signal Current Gain 100 400 h fe Output Admittance 3.0 60 S h oe V = -20V, I = -10mA, CE C Current Gain-Bandwidth Product f 250 MHz T f = 100MHz SWITCHING CHARACTERISTICS Delay Time t 35 ns d V = -3.0V, I = -10mA, CC C V = 0.5V, I = -1.0mA Rise Time t 35 ns BE(off) B1 r Storage Time 225 ns t s V = -3.0V, I = -10mA, CC C I = I = -1.0mA Fall Time 75 ns B1 B2 t f Notes: 5. Short duration pulse test used to minimize self-heating effect. 100 250 200 150 10 100 50 1 1 0.1 10 100 0 0 40 80 120 160 200 V , COLLECTOR-BASE VOLTAGE (V) CB T , AMBIENT TEMPERATURE (C) A Fig. 2 Typical Input and Output Capacitance vs. Collector-Base Voltage Fig. 1 Power Derating Curve MMBT3906T DS30271 Rev. 8 - 2 2 of 4 Diodes Incorporated www.diodes.com P , POWER DISSIPATION (mW) D C , INPUT CAPACITANCE (pF) IBO C , OUTPUT CAPACITANCE (pF) OBO