MMBT4401-13-F Diodes Incorporated

MMBT4401-13-F electronic component of Diodes Incorporated
MMBT4401-13-F Diodes Incorporated
MMBT4401-13-F Bipolar Transistors - BJT
MMBT4401-13-F  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of MMBT4401-13-F Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MMBT4401-13-F Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. MMBT4401-13-F
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT BIPOLAR TRANSISTOR NPN
Datasheet: MMBT4401-13-F Datasheet (PDF)
Price (USD)
1: USD 0.1625 ea
Line Total: USD 0.16 
Availability : 135743
  
Ship by Wed. 06 Aug to Fri. 08 Aug
QtyUnit Price
1$ 0.1625
10$ 0.1012
100$ 0.0638
500$ 0.0444
1000$ 0.0322
2500$ 0.0242
5000$ 0.022
10000$ 0.0165
20000$ 0.0154

Availability 8439
Ship by Fri. 15 Aug to Wed. 20 Aug
MOQ : 20
Multiples : 20
QtyUnit Price
20$ 0.0575
200$ 0.0441
600$ 0.0274
2000$ 0.0217
10000$ 0.0192
20000$ 0.0177


Availability 135743
Ship by Wed. 06 Aug to Fri. 08 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.1625
10$ 0.1012
100$ 0.0638
500$ 0.0444
1000$ 0.0322
2500$ 0.0242
5000$ 0.022
10000$ 0.0165
20000$ 0.0154

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MMBT4401-13-F from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMBT4401-13-F and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MMBT4401 40V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Epitaxial Planar Die Construction Case: SOT23 Ideal for Medium Power Amplification and Switching Case material: molded Plastic Green Compound UL Flammability Rating 94V-0 Complementary PNP Type: MMBT4403 Moisture Sensitivity: Level 1 per J-STD-020 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Terminals: Finish - Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 Qualified to AEC-Q101 Standards for High Reliability Weight: 0.008 grams (Approximate) PPAP capable (Note 4) SOT23 C E B C B E Top View Top View Pin-Out Device Symbol Ordering Information (Notes 4 & 5) Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel MMBT4401-7-F AEC-Q101 K2X 7 8 3,000 MMBT4401-13-F AEC-Q101 K2X 13 8 10,000 MMBT4401Q-13-F Automotive K2X 13 8 10,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See MMBT4401 Absolute Maximum Ratings ( T = +25C unless otherwise specified) A Characteristic Symbol Value Unit Collector-Base Voltage V 60 V CBO Collector-Emitter Voltage V 40 V CEO Emitter-Base Voltage V 6.0 V EBO Collector Current I 600 mA C Peak Collector Current 1 A I CM Peak Base Current 200 mA I BM Thermal Characteristics ( T = +25C unless otherwise specified) A Characteristic Symbol Value Unit (Note 6) 310 Power Dissipation mW P D (Note 7) 350 (Note 6) 403 Thermal Resistance, Junction to Ambient R C/W JA (Note 7) 357 Thermal Resistance, Junction to Leads (Note 8) R 350 C/W JL Operating and Storage Temperature Range T T -55 to +150 C J, STG ESD Ratings (Note 9) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 6. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR4 PCB device is measured under still air conditions whilst operating in a steady-state. 7. Same as note (6), except the device is mounted on 15 mm x 15mm 1oz copper. 8. Thermal resistance from junction to solder-point (at the end of the leads). 9. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 November 2013 MMBT4401 Diodes Incorporated www.diodes.com Document Number: DS30039 Rev. 17 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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