MMDT2227Q-7-F Diodes Incorporated

MMDT2227Q-7-F electronic component of Diodes Incorporated
MMDT2227Q-7-F Diodes Incorporated
MMDT2227Q-7-F Bipolar Transistors - BJT
MMDT2227Q-7-F  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of MMDT2227Q-7-F Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MMDT2227Q-7-F Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. MMDT2227Q-7-F
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT General Purpose Transistor SOT363 T&R 3K
Datasheet: MMDT2227Q-7-F Datasheet (PDF)
Price (USD)
5: USD 0.1828 ea
Line Total: USD 0.91 
Availability : 1391
  
Ship by Thu. 04 Sep to Tue. 09 Sep
QtyUnit Price
5$ 0.1828
50$ 0.1426
150$ 0.1226
500$ 0.0726
3000$ 0.064
6000$ 0.0599

Availability 1391
Ship by Thu. 04 Sep to Tue. 09 Sep
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.1828
50$ 0.1426
150$ 0.1226
500$ 0.0726
3000$ 0.064
6000$ 0.0599

   
Manufacturer
Product Category
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MMDT2227Q-7-F from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMDT2227Q-7-F and other electronic components in the Bipolar Transistors - BJT category and beyond.

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The MMDT2227Q-7-F is a Bipolar Transistor (BJT) in the SOT363 Package with a Tape and Reel of 3K manufactured by Diodes Incorporated. This device is a general-purpose transistor and features a PNP type B-E structure. It has a maximum collector current rating of 800mA and a Collector-Emitter voltage of 80V. The VCEO (Collector-Emitter Breakdown voltage) is 80V plus or minus 2V. The IC (Collector current) is 40mA and the power dissipation is 500mW. The continuous DC forward current is 80A and the maximum Paralleled device power dissipation is 4000mW. It also has a Gain Bandwidth Product of up to 180MHz and a maximum transition frequency of 300MHz. This device is suitable for use in linear and switching applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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