MMDT2907A-7-F Diodes Incorporated

MMDT2907A-7-F electronic component of Diodes Incorporated
MMDT2907A-7-F Diodes Incorporated
MMDT2907A-7-F Bipolar Transistors - BJT
MMDT2907A-7-F  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of MMDT2907A-7-F Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MMDT2907A-7-F Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. MMDT2907A-7-F
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT -60V 200mW
Datasheet: MMDT2907A-7-F Datasheet (PDF)
Price (USD)
10: USD 0.1064 ea
Line Total: USD 1.06 
Availability : 2900
  
Ship by Thu. 04 Sep to Tue. 09 Sep
QtyUnit Price
10$ 0.1064
100$ 0.0808
300$ 0.051
3000$ 0.0393
6000$ 0.034
9000$ 0.0316

Availability 2900
Ship by Thu. 04 Sep to Tue. 09 Sep
MOQ : 10
Multiples : 10
QtyUnit Price
10$ 0.1064
100$ 0.0808
300$ 0.051
3000$ 0.0393
6000$ 0.034
9000$ 0.0316


Availability 9602
Ship by Tue. 26 Aug to Thu. 28 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.4625
10$ 0.295
100$ 0.1788
500$ 0.1221
1000$ 0.1078
3000$ 0.0902
6000$ 0.0814
9000$ 0.0693
24000$ 0.066


Availability 721680
Ship by Thu. 28 Aug to Wed. 03 Sep
MOQ : 6000
Multiples : 3000
QtyUnit Price
6000$ 0.0682

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MMDT2907A-7-F from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMDT2907A-7-F and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MMDT2907A-7-F is a bipolar NPN Metal-SILICON Complementary Transistor manufactured by Diodes Incorporated. This device is designed for transistor switching and amplifier applications with a maximum collector-emitter voltage of 60V and a maximum power dissipation of 200mW. Featuring a low current gain of 40 and an operating frequency range up to 50MHz, this device is capable of high frequency operations and delivers excellent switching performance. Moreover, it is RoHS compliant and offers a great balance of performance, size and cost efficiency.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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