MMDT3904Q-7-F Diodes Incorporated

MMDT3904Q-7-F electronic component of Diodes Incorporated
MMDT3904Q-7-F Diodes Incorporated
MMDT3904Q-7-F Bipolar Transistors - BJT
MMDT3904Q-7-F  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of MMDT3904Q-7-F Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MMDT3904Q-7-F Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. MMDT3904Q-7-F
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT 40V Dual NPN Small Signal Transistor
Datasheet: MMDT3904Q-7-F Datasheet (PDF)
Price (USD)
1: USD 0.375 ea
Line Total: USD 0.38 
Availability : 17128
  
Ship by Mon. 18 Aug to Wed. 20 Aug
QtyUnit Price
1$ 0.375
10$ 0.2262
100$ 0.1356
500$ 0.0924
1000$ 0.0847
3000$ 0.0539
6000$ 0.0484
9000$ 0.0451

Availability 829
Ship by Wed. 27 Aug to Mon. 01 Sep
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.1342
50$ 0.106
150$ 0.0918
500$ 0.0547
3000$ 0.049
6000$ 0.0462


Availability 17128
Ship by Mon. 18 Aug to Wed. 20 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.375
10$ 0.2262
100$ 0.1356
500$ 0.0924
1000$ 0.0847
3000$ 0.0539
6000$ 0.0484
9000$ 0.0451

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Series
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MMDT3904Q-7-F from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMDT3904Q-7-F and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MMDT3904Q 40V DUAL NPN SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data Epitaxial Planar Die Construction Case: SOT363 Ideal for Medium Power Amplification and Switching Case Material: Molded Plastic, Green Molding Compound Ultra-Small Surface Mount Package UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Moisture Sensitivity: Level 1 per J-STD-020 Halogen and Antimony Free. Green Device (Note 3) Terminals: Finish Matte Tin Finish Solderable per MIL-STD- Qualified to AEC-Q101 Standards for High Reliability 202, Method 208 PPAP Capable (Note 4) Weight: 0.006 grams (Approximate) SOT363 Device Schematic Top View Top View Ordering Information (Note 5) Product Status Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel MMDT3904Q-7-F Active Automotive K6N 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See MMDT3904Q Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V 60 V CBO Collector-Emitter Voltage V 40 V CEO Emitter-Base Voltage V 6.0 V EBO Collector Current I 200 mA C Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 6) 200 mW P D Thermal Resistance, Junction to Ambient (Note 6) R 625 C/W JA Operating and Storage Temperature Range T , T -55 to +150 C J STG ESD Ratings (Note 7) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 6. For the device mounted on minimum recommended pad layout FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions the device is measured when operating in a steady-state condition. 7. Refer to JEDEC specification JESD22-A114 and JESD22-A115. Thermal Characteristic and Derating Information 200 150 100 50 0 0 25 50 100 125 150 175 200 75 T , AMBIENT TEMPERATURE ((C )) A Fig. 1, Power Dissipation vs. Ambient Temperature (Total Device) 2 of 6 MMDT3904Q November 2016 Diodes Incorporated www.diodes.com Document number: DS39283 Rev. 1 - 2 P , POWER DISSIPATION (mW) D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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