MSB25MH-13 Diodes Incorporated

MSB25MH-13 electronic component of Diodes Incorporated
MSB25MH-13 Diodes Incorporated
MSB25MH-13 Bipolar Transistors - BJT
MSB25MH-13  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of MSB25MH-13 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MSB25MH-13 Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. MSB25MH-13
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT Bridge Rectifier
Datasheet: MSB25MH-13 Datasheet (PDF)
Price (USD)
1: USD 0.875 ea
Line Total: USD 0.88 
Availability : 2002
  
Ship by Wed. 03 Sep to Fri. 05 Sep
QtyUnit Price
1$ 0.875
10$ 0.5775
100$ 0.4136
500$ 0.3179
1000$ 0.2827
2500$ 0.2508
5000$ 0.2277

Availability 14
Ship by Fri. 12 Sep to Wed. 17 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.356
10$ 0.3478
30$ 0.3422
100$ 0.2507


Availability 2002
Ship by Wed. 03 Sep to Fri. 05 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.875
10$ 0.5775
100$ 0.4136
500$ 0.3179
1000$ 0.2827
2500$ 0.2508
5000$ 0.2277

   
Manufacturer
Product Category
RoHS - XON
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Packaging
Brand
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MSB25MH-13 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MSB25MH-13 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MSB25MH Green 2.5A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Product Summary ( T = +25C) Features and Benefits A V (V) I (A) V (V) I (A) Glass Passivated Die Construction RRM O F R Compact, Thin Profile Package Design 1000 2.5 1.1 5 Reliable Robust Construction Ideal for SMT Manufacturing Rated at 1000V PRV Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description and Applications Mechanical Data Suitable for AC to DC bridge full wave rectification for SMPS, LED lighting, adapter, battery charger, home appliances, office equipment Case: MSBL and telecommunication applications. Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Lead Free Plating (Matte Tin Finish). Solderable per MIL-STD-202, Method 208 Polarity: As marked on Body Weight: 0.216 grams (Approximate) Top View Pin Diagram Internal Schematic Ordering Information (Note 4) Part Number Compliance Case Packaging MSB25MH-13 Commercial MSBL 2500/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See MSB25MH Maximum Ratings ( T = +25C, unless otherwise specified.) A Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol Value Unit V Peak Repetitive Reverse Voltage RRM Working Peak Reverse Voltage 1000 V V RWM DC Blocking Voltage V R RMS Reverse Voltage V 700 V R(RMS) Average Rectified Output Current T = +110C I 2.5 A C O Non-Repetitive Peak Forward Surge Current, 8.3ms I 80 A FSM Single Half Sine-Wave Superimposed on Rated Load Non-Repetitive Peak Forward Surge Current, 1.0ms 160 A I FSM Single Half Sine-Wave Superimposed on Rated Load 2 2 2 I t Rating for Fusing (1ms < t < 8.3ms) I t 26.5 A S Thermal Characteristics Characteristic Symbol Value Unit Typical Thermal Resistance, Junction to Ambient (Note 5) R 35 C/W JA (Per Element) Typical Thermal Resistance, Junction to Case R 7.8 C/W JC Typical Thermal Resistance, Junction to Lead R 16 C/W JL Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition 1000 Reverse Breakdown Voltage (Note 6) V V I = 5A (BR)R R I = 1.25A, T = +25C F A 1.02 0.78 I = 1.25A, T = +125C F A Forward Voltage (Per Element) V VF 1.1 I = 2.5A, T = +25C F A 0.86 I = 2.5A, T = +125C F A 0.31 5 V = 1000V, T = +25C R A Leakage Current (Note 6) (Per Element) I A R 500 V = 1000V, T = +125C R A 30 Total Capacitance (Note 7) C pF V = 4V, f = 1.0MHz T R Notes: 5. Device mounted on glass-epoxy substrate with 1 oz 20mm x 20mm Cu pad per pin. 6. Short duration pulse test used to minimize self-heating effect. 7. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 2 of 5 MSB25MH November 2016 Diodes Incorporated www.diodes.com Document number: DS38865 Rev. 3 - 2 ADVANCED INFORMATION ADVANCED INFORMATION NEW PRODUCT

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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