PNP SILICON PLANAR ZTX549 ZTX549 MEDIUM POWER TRANSISTORS ZTX549A ZTX549A ISSUE 1 MARCH 94 FEATURES ELECTRICAL CHARACTERISTICS (at T = 25C). amb * 30 Volt V CEO PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. * 1 Amp continuous current Transition Frequency f 100 MHz I =-100mA, V =-5V T C CE *P = 1 Watt tot f=100MHz Output Capacitance C 25 pF V =-10V, f=1MHz obo CB C B Switching Times t 300 ns I =-500mA, V =-10V E on C CC I =I =-50mA B1 B2 t 50 ns off E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V -35 V CBO Collector-Emitter Voltage V -30 V CEO Emitter-Base Voltage V -5 V EBO Peak Pulse Current I -2 A CM Continuous Collector Current I -1 A C Power Dissipation: at T =25C P 1 W amb tot derate above 25C 5.7 mW/ C Operating and Storage Temperature Range T :T -55 to +200 C j stg ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown V -35 V I =-100A (BR)CBO C Voltage Collector-Emitter V -30 V I =-10mA (BR)CEO C Breakdown Voltage Emitter-Base Breakdown V -5 V I =-100A (BR)EBO E Voltage Collector Cut-Off Current I -0.1 A V =-30V CBO CB -10 V =-30V, T =100C A CB amb Emitter Cut-Off Current I -0.1 A V =-4V EBO EB Collector-Emitter V -0.25 -0.50 V I =-1A, I =-100mA* CE(sat) C B Saturation Voltage -0.50 -0.75 V I =-2A, I =-200mA* C B ZTX549A -0.30 V I =-100mA, I =-1mA* C B Base-Emitter V -0.9 -1.25 V I =-1A, I =-100mA* BE(sat) C B Saturation Voltage Base-Emitter V -0.85 -1 V IC=-1A, V =-2V* BE(on) CE Saturation Voltage Static Forward Current h 70 200 I =-50mA, V =-2V* FE C CE Transfer Ratio 80 130 I =-1A, V =-2V* C CE 40 80 I =-2A, V =-2V* C CE ZTX549 100 160 300 I =-500mA, V =-2V* C CE ZTX549A 150 200 500 I =-500mA, V =-2V* C CE *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% 3-192 3-191PNP SILICON PLANAR ZTX549 ZTX549 MEDIUM POWER TRANSISTORS ZTX549A ZTX549A ISSUE 1 MARCH 94 FEATURES ELECTRICAL CHARACTERISTICS (at T = 25C). amb * 30 Volt V CEO PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. * 1 Amp continuous current Transition Frequency f 100 MHz I =-100mA, V =-5V T C CE *P = 1 Watt tot f=100MHz Output Capacitance C 25 pF V =-10V, f=1MHz obo CB C B Switching Times t 300 ns I =-500mA, V =-10V E on C CC I =I =-50mA B1 B2 t 50 ns off E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V -35 V CBO Collector-Emitter Voltage V -30 V CEO Emitter-Base Voltage V -5 V EBO Peak Pulse Current I -2 A CM Continuous Collector Current I -1 A C Power Dissipation: at T =25C P 1 W amb tot derate above 25C 5.7 mW/ C Operating and Storage Temperature Range T :T -55 to +200 C j stg ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown V -35 V I =-100A (BR)CBO C Voltage Collector-Emitter V -30 V I =-10mA (BR)CEO C Breakdown Voltage Emitter-Base Breakdown V -5 V I =-100A (BR)EBO E Voltage Collector Cut-Off Current I -0.1 A V =-30V CBO CB -10 V =-30V, T =100C A CB amb Emitter Cut-Off Current I -0.1 A V =-4V EBO EB Collector-Emitter V -0.25 -0.50 V I =-1A, I =-100mA* CE(sat) C B Saturation Voltage -0.50 -0.75 V I =-2A, I =-200mA* C B ZTX549A -0.30 V I =-100mA, I =-1mA* C B Base-Emitter V -0.9 -1.25 V I =-1A, I =-100mA* BE(sat) C B Saturation Voltage Base-Emitter V -0.85 -1 V IC=-1A, V =-2V* BE(on) CE Saturation Voltage Static Forward Current h 70 200 I =-50mA, V =-2V* FE C CE Transfer Ratio 80 130 I =-1A, V =-2V* C CE 40 80 I =-2A, V =-2V* C CE ZTX549 100 160 300 I =-500mA, V =-2V* C CE ZTX549A 150 200 500 I =-500mA, V =-2V* C CE *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% 3-192 3-191