NPN SILICON PLANAR MEDIUM POWER ZTX696B ZTX696B HIGH GAIN TRANSISTOR ISSUE 3 - NOVEMBER 1995 FEATURES * 180 Volt V CEO ELECTRICAL CHARACTERISTICS (at T = 25C) * Gain of 500 at I =100mA amb C * Very low saturation voltage PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. APPLICATIONS Transition Frequency f 70 MHz I =50mA, V =5V T C CE f=50MHz * Darlington replacement C Input Capacitance C 200 pF V =0.5V, f=1MHz B * Battery powered circuits ibo EB E Output Capacitance C 6pFV =10V, f=1MHz * Motor drivers obo CE E-Line Switching Times t 80 ns I =100mA, I =10mA * Relay / solenoid drivers on C B TO92 Compatible t 4400 ns I =10mA, V =50V off B2 CC ABSOLUTE MAXIMUM RATINGS. *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V 180 V CBO Collector-Emitter Voltage V 180 V CEO THERMAL CHARACTERISTICS Emitter-Base Voltage V 5V EBO PARAMETER SYMBOL MAX. UNIT Peak Pulse Current I 1A CM Continuous Collector Current I 0.5 A Thermal Resistance:Junction to Ambient R 175 C/W C 1 th(j-amb)1 Junction to Ambient R 116 C/W 2 th(j-amb)2 Practical Power Dissipation * P 1.5 W totp Junction to Case R 70 C/W th(j-case) Power Dissipation at T =25C P 1 W amb tot Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. derate above 25C 5.7 mW/C Operating and Storage Temperature Range T :T -55 to +200 C j stg *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at T = 25C) amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown V 180 V I =100A (BR)CBO C Voltage Collector-Emitter Breakdown V 180 V I =10mA* (BR)CEO C Voltage Emitter-Base Breakdown V5V I =100A (BR)EBO E Voltage Collector Cut-Off Current I 0.1 A V =145V CBO CB Emitter Cut-Off Current I 0.1 A V =4V EBO EB Collector-Emitter Saturation V 0.2 V I =50mA, I =0.5mA* CE(sat) C B Voltage 0.2 V I =100mA, I =2mA* C B 0.25 V I =200mA, I =5mA* C B Base-Emitter V 0.9 V I =200mA, I =5mA* BE(sat) C B Saturation Voltage Base-Emitter V 0.9 V I =200mA, V =5V* BE(on) C CE Turn-On Voltage Static Forward Current h 500 I =100mA, V =5V* FE C CE Transfer Ratio 150 I =200mA, V =5V* C CE 3-248 3-247NPN SILICON PLANAR MEDIUM POWER ZTX696B ZTX696B HIGH GAIN TRANSISTOR ISSUE 3 - NOVEMBER 1995 FEATURES * 180 Volt V CEO ELECTRICAL CHARACTERISTICS (at T = 25C) * Gain of 500 at I =100mA amb C * Very low saturation voltage PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. APPLICATIONS Transition Frequency f 70 MHz I =50mA, V =5V T C CE f=50MHz * Darlington replacement C Input Capacitance C 200 pF V =0.5V, f=1MHz B * Battery powered circuits ibo EB E Output Capacitance C 6pFV =10V, f=1MHz * Motor drivers obo CE E-Line Switching Times t 80 ns I =100mA, I =10mA * Relay / solenoid drivers on C B TO92 Compatible t 4400 ns I =10mA, V =50V off B2 CC ABSOLUTE MAXIMUM RATINGS. *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V 180 V CBO Collector-Emitter Voltage V 180 V CEO THERMAL CHARACTERISTICS Emitter-Base Voltage V 5V EBO PARAMETER SYMBOL MAX. UNIT Peak Pulse Current I 1A CM Continuous Collector Current I 0.5 A Thermal Resistance:Junction to Ambient R 175 C/W C 1 th(j-amb)1 Junction to Ambient R 116 C/W 2 th(j-amb)2 Practical Power Dissipation * P 1.5 W totp Junction to Case R 70 C/W th(j-case) Power Dissipation at T =25C P 1 W amb tot Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. derate above 25C 5.7 mW/C Operating and Storage Temperature Range T :T -55 to +200 C j stg *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at T = 25C) amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown V 180 V I =100A (BR)CBO C Voltage Collector-Emitter Breakdown V 180 V I =10mA* (BR)CEO C Voltage Emitter-Base Breakdown V5V I =100A (BR)EBO E Voltage Collector Cut-Off Current I 0.1 A V =145V CBO CB Emitter Cut-Off Current I 0.1 A V =4V EBO EB Collector-Emitter Saturation V 0.2 V I =50mA, I =0.5mA* CE(sat) C B Voltage 0.2 V I =100mA, I =2mA* C B 0.25 V I =200mA, I =5mA* C B Base-Emitter V 0.9 V I =200mA, I =5mA* BE(sat) C B Saturation Voltage Base-Emitter V 0.9 V I =200mA, V =5V* BE(on) C CE Turn-On Voltage Static Forward Current h 500 I =100mA, V =5V* FE C CE Transfer Ratio 150 I =200mA, V =5V* C CE 3-248 3-247