s) Max Power Dissipation - (Watt Case temperature Ambient temperature NPN SILICON PLANAR MEDIUM POWER ZTX851 ZTX851 HIGH CURRENT TRANSISTOR ISSUE 2 AUGUST 94 FEATURES ELECTRICAL CHARACTERISTICS (at T = 25C) amb * 60 Volt V CEO PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. * 5 Amps continuous current Base-Emitter V 840 950 mV IC=4A, V =1V* BE(on) CE * Up to 20 Amps peak current Turn-On Voltage * Very low saturation voltage Static Forward h 100 200 I =10mA, V =1V FE C CE *P =1.2 Watts C tot Current Transfer 100 200 300 I =2A, V =1V* C CE B E APPLICATIONS Ratio 75 120 I =5A, V =1V* C CE 25 50 I =10A, V =1V* C CE * Emergency lighting circuits E-Line Transition Frequency f 130 MHz I =100mA, V =10V T C CE TO92 Compatible f=50MHz ABSOLUTE MAXIMUM RATINGS. Output Capacitance C 45 pF V =10V, f=1MHz obo CB PARAMETER SYMBOL VALUE UNIT Switching Times t 45 ns I =1A, I =100mA on C B Collector-Base Voltage V 150 V t 1100 ns I =100mA, V =10V CBO off B2 CC *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Collector-Emitter Voltage V 60 V CEO Emitter-Base Voltage V 6V EBO Peak Pulse Current I 20 A CM THERMAL CHARACTERISTICS Continuous Collector Current I 5A C PARAMETER SYMBOL MAX. UNIT Practical Power Dissipation* P 1.58 W totp Thermal Resistance: Junction to Ambient R 150 C/W th(j-amb) Power Dissipation at T =25C P 1.2 W Junction to Case R 50 C/W amb tot th(j-case) Operating and Storage Temperature Range T :T -55 to +200 C j stg *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated) amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown V 150 220 V I =100A (BR)CBO C 4.0 Voltage D.C. 150 t1 Collector-Emitter Breakdown V 150 220 V IC=1A, RB 1K D=t1/tP (BR)CER 3.0 Voltag 100 t P Collector-Emitter Breakdown V 60 85 V I =10mA* (BR)CEO C D=0.6 Voltage 2.0 Emitter-Base Breakdown V 68 V I =100A (BR)EBO E 50 Voltage D=0.2 1.0 D=0.1 Collector Cut-Off Current I 50 nA V =120V CBO CB D=0.05 Single Pulse 1 A V =120V, T =100C 0 CB amb -40 -20 0 20 40 60 80 100 120 140 160 180 200 0.0001 0.001 0.01 0.1 1 10 100 Collector Cut-Off Current I 50 nA V =120V CER CB T -Temperature (C) Pulse Width (seconds) R 1K 1 A V =120V, T =100C CB amb Emitter Cut-Off Current I 10 nA V =6V Derating curve Maximum transient thermal impedance EBO EB Collector-Emitter Saturation V 10 50 mV I =0.1A, I =5mA* CE(sat) C B Voltage 50 100 mV I =1A, I =50mA* C B 100 150 mV I =2A, I =50mA* C B 200 250 mV I =5A, I =200mA* C B Base-Emitter V 920 1050 mV I =4A, I =200mA* BE(sat) C B Saturation Voltage 3-295 3-294 Thermal Resistance (C/W) s) Max Power Dissipation - (Watt Case temperature Ambient temperature NPN SILICON PLANAR MEDIUM POWER ZTX851 ZTX851 HIGH CURRENT TRANSISTOR ISSUE 2 AUGUST 94 FEATURES ELECTRICAL CHARACTERISTICS (at T = 25C) amb * 60 Volt V CEO PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. * 5 Amps continuous current Base-Emitter V 840 950 mV IC=4A, V =1V* BE(on) CE * Up to 20 Amps peak current Turn-On Voltage * Very low saturation voltage Static Forward h 100 200 I =10mA, V =1V FE C CE *P =1.2 Watts C tot Current Transfer 100 200 300 I =2A, V =1V* C CE B E APPLICATIONS Ratio 75 120 I =5A, V =1V* C CE 25 50 I =10A, V =1V* C CE * Emergency lighting circuits E-Line Transition Frequency f 130 MHz I =100mA, V =10V T C CE TO92 Compatible f=50MHz ABSOLUTE MAXIMUM RATINGS. Output Capacitance C 45 pF V =10V, f=1MHz obo CB PARAMETER SYMBOL VALUE UNIT Switching Times t 45 ns I =1A, I =100mA on C B Collector-Base Voltage V 150 V t 1100 ns I =100mA, V =10V CBO off B2 CC *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Collector-Emitter Voltage V 60 V CEO Emitter-Base Voltage V 6V EBO Peak Pulse Current I 20 A CM THERMAL CHARACTERISTICS Continuous Collector Current I 5A C PARAMETER SYMBOL MAX. UNIT Practical Power Dissipation* P 1.58 W totp Thermal Resistance: Junction to Ambient R 150 C/W th(j-amb) Power Dissipation at T =25C P 1.2 W Junction to Case R 50 C/W amb tot th(j-case) Operating and Storage Temperature Range T :T -55 to +200 C j stg *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated) amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown V 150 220 V I =100A (BR)CBO C 4.0 Voltage D.C. 150 t1 Collector-Emitter Breakdown V 150 220 V IC=1A, RB 1K D=t1/tP (BR)CER 3.0 Voltag 100 t P Collector-Emitter Breakdown V 60 85 V I =10mA* (BR)CEO C D=0.6 Voltage 2.0 Emitter-Base Breakdown V 68 V I =100A (BR)EBO E 50 Voltage D=0.2 1.0 D=0.1 Collector Cut-Off Current I 50 nA V =120V CBO CB D=0.05 Single Pulse 1 A V =120V, T =100C 0 CB amb -40 -20 0 20 40 60 80 100 120 140 160 180 200 0.0001 0.001 0.01 0.1 1 10 100 Collector Cut-Off Current I 50 nA V =120V CER CB T -Temperature (C) Pulse Width (seconds) R 1K 1 A V =120V, T =100C CB amb Emitter Cut-Off Current I 10 nA V =6V Derating curve Maximum transient thermal impedance EBO EB Collector-Emitter Saturation V 10 50 mV I =0.1A, I =5mA* CE(sat) C B Voltage 50 100 mV I =1A, I =50mA* C B 100 150 mV I =2A, I =50mA* C B 200 250 mV I =5A, I =200mA* C B Base-Emitter V 920 1050 mV I =4A, I =200mA* BE(sat) C B Saturation Voltage 3-295 3-294 Thermal Resistance (C/W)