ZXT11N20DFTA Diodes Incorporated

ZXT11N20DF SuperSOT4 20V NPN SILICON LOW SATURATION TRANSISTOR SUMMARY V =20V R = 40m I = 2.5A CEO SAT C DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low SOT23 voltage switching applications. FEATURES Extremely Low Equivalent On Resistance Extremely Low Saturation Voltage h characterised up to 5A FE I =2.5A Continuous Collector Current C SOT23 package APPLICATIONS DC - DC Converters Power Management Functions Power switches E C Motor control B ORDERING INFORMATION DEVICE REEL SIZE TAPE WIDTH QUANTITY Top View (inches) (mm) PER REEL ZXT11N20DFTA 7 8mm embossed 3000 units ZXT11N20DFTC 13 8mm embossed 10000 units DEVICE MARKING 2N0 ISSUE 1 - DECEMBER 1999 1ZXT11N20DF ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL LIMIT UNIT Collector-Base Voltage V 40 V CBO Collector-Emitter Voltage V 20 V CEO Emitter-Base Voltage V 7.5 V EBO Peak Pulse Current I 5A CM Continuous Collector Current I 2.5 A C Base Current I 500 mA B Power Dissipation at TA=25C (a) P 625 mW D 5 mW/C Linear Derating Factor Power Dissipation at TA=25C (b) P 806 mW D 6.4 mW/C Linear Derating Factor Operating and Storage Temperature Range T :T -55 to +150 C j stg THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) R 200 C/W JA Junction to Ambient (b) R 155 C/W JA NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 5 secs. ISSUE 1 - DECEMBER 1999 2