A Product Line of Diodes Incorporated ZXTD718MC DUAL 20V PNP LOW SATURATION SWITCHING TRANSISTOR Features and Benefits Mechanical Data BV > -20V Case: DFN3020B-8 CEO Case material: Molded Plastic. Green Molding Compound. I = -3.5A Continuous Collector Current C R = 64 m for Low Equivalent On Resistance UL Flammability Rating 94V-0 SAT Low Saturation Voltage (-220mV -1A) Terminals: Pre-Plated NiPdAu leadframe. hFE characterized up to -6A for high current gain holds up Nominal package height: 0.8mm Dual NPN saving footprint and component count Moisture Sensitivity: Level 1 per J-STD-020 Low profile 0.8mm high package for thin applications Solderable per MIL-STD-202, Method 208 R efficient, 40% lower than SOT26 JA Weight: 0.013 grams (approximate) 2 6mm footprint, 50% smaller than TSOP6 and SOT26 Lead-Free, RoHS Compliant (Note 1) Halogen and Antimony Free. Green Device (Note 2) Applications Qualified to AEC-Q101 Standards for High Reliability Battery charging circuits Load disconnect switches DC-DC converters Motor drive LED backlighting circuits Portable applications C2 C1 DFN3020B-8 C2 C2 C1 C1 C2 C1 B2 B1 E2 B2 E1 B1 Pin 1 E2 E1 Bottom View Top View PNP Transistor Bottom View PNP Transistor Pin Out Equivalent Circuit Ordering Information (Note 3) Product Marking Reel size (inches) Tape width (mm) Quantity per reel ZXTD718MCTA D22 7 8 3,000 Notes: 1. No purposefully added lead. 2. Diodes Incs Green Policy can be found on our website at A Product Line of Diodes Incorporated ZXTD718MC Maximum Ratings T = 25C unless otherwise specified A Parameter Symbol Limit Unit Collector-Base Voltage -25 V CBO Collector-Emitter Voltage -20 V V CEO Emitter-Base Voltage -7 V EBO Peak Pulse Current -6 I CM Continuous Collector Current (Notes 4 and 7) I -3.5 A C Base Current I -1 B Thermal Characteristics T = 25C unless otherwise specified A Characteristic Symbol Value Unit 1.5 (Notes 4 & 7) 12 2.45 (Notes 5 & 7) 19.6 W Power Dissipation P D Linear Derating Factor 1.13 mW/C (Notes 6 & 7) 8 1.7 (Notes 6 & 8) 13.6 (Notes 4 & 7) 83.3 (Notes 5 & 7) 51.0 Thermal Resistance, Junction to Ambient R JA (Notes 6 & 7) 111 C/W (Notes 6 & 8) 73.5 Thermal Resistance, Junction to Lead (Notes 7 & 9) 17.1 R JL Operating and Storage Temperature Range T , T -55 to +150 C J STG 2 Notes: 4. For a dual device surface mounted on 28mm x 28mm (8cm ) FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions the device is measured when operating in a steady-state condition. The heatsink is split in half with the exposed collector pads connected to each half. 5. Same as note (4), except the device is measured at t <5 sec. 2 6. Same as note (4), except the device is surface mounted on 31mm x 31mm (10cm ) FR4 PCB with high coverage of single sided 1oz copper. 7. For a dual device with one active die. 8. For dual device with 2 active die running at equal power. 9. Thermal resistance from junction to solder-point (at the end of the collector lead). 2 of 7 January 2011 ZXTD718MC Diodes Incorporated www.diodes.com Document Number DS32000 Rev. 2 - 2