ZXTN19055DZTA Diodes Incorporated

ZXTN19055DZ 55V, SOT89, NPN medium power transistor Summary BV > 150V CEX BV > 55V CEO I = 6A C(cont) V < 60mV 1A CE(sat) R = 28m CE(sat) P = 2.1W D Description C Packaged in the SOT89 outline this low saturation 55V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. B Feature Extremely low equivalent on-resistance of 28m E 6 Amps continuous current Up to 10 amps peak current Very low saturation voltages E Excellent h characteristics up to 10 amps FE 150V Forward blocking voltage C C Applications B Emergency lighting circuits Pinout - top view Motor driving (including DC fans) Solenoid, relay and actuator drivers DC modules Backlight inverters Ordering information Device Reel size Tape width Quantity per reel (inches) (mm) ZXTN19055DZTA 7 12 1000 Device marking S75 Issue 1 - June 2006 1 www.zetex.com Zetex Semiconductors plc 2006ZXTN19055DZ Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage V 150 V CBO Collector-emitter voltage (forward blocking voltage) V 150 V CEX Collector-emitter voltage (base open) V 55 V CEO Emitter-base voltage V 7V EBO (b) I 6A C Continuous collector current Peak pulse current I 10 A CM (a) P 1.5 W Power dissipation at T =25C D amb Linear derating factor 12 mW/C (b) P 2.1 W D Power dissipation at T =25C amb Linear derating factor 16.8 mW/C Operating and storage temperature range T , T -55 to +150 C j stg Thermal resistance Parameter Symbol Limit Unit (a) R 83 C/W Junction to ambient JA (b) R 59 C/W Junction to ambient JA NOTES: (a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b)For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. Issue 1 - June 2006 2 www.zetex.com Zetex Semiconductors plc 2006