ZXTN2007ZTA Diodes Incorporated

ZXTN2007ZTA electronic component of Diodes Incorporated
ZXTN2007ZTA Diodes Incorporated
ZXTN2007ZTA Bipolar Transistors - BJT
ZXTN2007ZTA  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of ZXTN2007ZTA Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. ZXTN2007ZTA Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. ZXTN2007ZTA
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Diodes Incorporated Bipolar Transistors - BJT 30V NPN Low Sat
Datasheet: ZXTN2007ZTA Datasheet (PDF)
Price (USD)
1: USD 1.6125 ea
Line Total: USD 1.61 
Availability : 1941
  
Ship by Tue. 02 Sep to Thu. 04 Sep
QtyUnit Price
1$ 1.6125
10$ 0.882
100$ 0.5511
500$ 0.451
1000$ 0.3993
2000$ 0.3652
5000$ 0.3619

Availability 1941
Ship by Tue. 02 Sep to Thu. 04 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.6125
10$ 0.882
100$ 0.5511
500$ 0.451
1000$ 0.3993
2000$ 0.3652
5000$ 0.3619


Availability 902
Ship by Thu. 11 Sep to Tue. 16 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.0948
10$ 0.902
30$ 0.6032
100$ 0.4787
500$ 0.4401
1000$ 0.42

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Height
Length
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the ZXTN2007ZTA from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ZXTN2007ZTA and other electronic components in the Bipolar Transistors - BJT category and beyond.

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The ZXTN2007ZTA with Diodes Incorporated Bipolar Transistors - BJT 30V NPN LowSat is a NPN Transistor designed by Diodes Incorporated. It has a total device power dissipation of 500 mW, an Ic collector current of up to 800 mA, a Beta hFE of 100 to 300, an Ic collector-emitter saturation voltage of 0.35 V, a Vceo collector-emitter voltage of 30 V, and a Vebo emitter-base voltage of 5 V. It also has a Collector Capacitance of 5.0 pF and a hFE gain bandwidth product of 8 MHz. The high collector-emitter voltage and low saturation voltage make this suitable for a variety of applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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