ZXTN2018FTA Diodes Incorporated

ZXTN2018F 60V, SOT23, NPN medium power transistor Summary V > 140V, V > 60V (BR)CEV (BR)CEO I = 5A C(cont) R = 25 m typical CE(sat) V < 45 mV 1A CE(sat) P = 1.2W D Complementary part number : ZXTP2027F Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. Features Higher power dissipation SOT23 package High peak current Low saturation voltage 140V forward blocking voltage Applications MOSFET and IGBT gate driving Motor drive Relay, lamp and solenoid drive Ordering information Pinout - top view Device Reel size Tape width Quantity per reel (inches) (mm) ZXTN2018FTA 7 8 3,000 Device marking 851 Issue 2 - September 2005 1 www.zetex.com Zetex Semiconductors plc 2005ZXTN2018F Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage V 140 V CBO Collector-emitter voltage V 140 V (BR)CEV Collector-emitter voltage V 60 V CEO Emitter-base voltage V 7V EBO Peak pulse current I 12 A CM (a) I 5A Continuous collector current C Base current I 1A B o (a) P 1.0 W Power dissipation T =25 C D A o 8.0 mW/ C Linear derating factor o (b) P 1.2 W Power dissipation T =25 C D A o mW/ C 9.6 Linear derating factor o (c) P 1.56 W Power dissipation T =25 C D A o 12.5 mW/ C Linear derating factor o Operating and storage temperature T :T -55 to +150 j stg C Thermal resistance Parameter Symbol Value Unit (a) o R 125 Junction to ambient JA C/W (b) o R 104 Junction to ambient JA C/W (c) o R 80 Junction to ambient JA C/W NOTES: (a) Mounted on 18mm x 18mm X 1.6mm FR4 PCB with a very high coverage of 2 oz weight copper in still air conditions. (b) Mounted on 30mm x 30mm X 1.6mm FR4 PCB with a very high coverage of 2 oz weight copper in still air conditions. (c) as (b) above measured at t<5secs. Issue 2 - September 2005 2 www.zetex.com Zetex Semiconductors plc 2005