ZXTN2020FTA Diodes Incorporated

ZXTN2020FTA electronic component of Diodes Incorporated
ZXTN2020FTA Diodes Incorporated
ZXTN2020FTA Bipolar Transistors - BJT
ZXTN2020FTA  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of ZXTN2020FTA Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. ZXTN2020FTA Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. ZXTN2020FTA
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 100 V 4 A 130MHz 1.2 W Surface Mount SOT-23-3
Datasheet: ZXTN2020FTA Datasheet (PDF)
Price (USD)
1: USD 1.275 ea
Line Total: USD 1.27 
Availability : 36491
  
Ship by Thu. 31 Jul to Mon. 04 Aug
QtyUnit Price
1$ 1.275
10$ 0.7716
100$ 0.4224
500$ 0.3487
1000$ 0.3256
3000$ 0.3003
6000$ 0.3003
9000$ 0.2992
24000$ 0.2882

Availability 2910
Ship by Mon. 04 Aug to Fri. 08 Aug
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.3188
6000$ 0.3125


Availability 36491
Ship by Thu. 31 Jul to Mon. 04 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.275
10$ 0.7716
100$ 0.4224
500$ 0.3487
1000$ 0.3256
3000$ 0.3003
6000$ 0.3003
9000$ 0.2992
24000$ 0.2882


Availability 679
Ship by Mon. 04 Aug to Fri. 08 Aug
MOQ : 632
Multiples : 1
QtyUnit Price
632$ 0.412


Availability 8730
Ship by Mon. 04 Aug to Fri. 08 Aug
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.3366


Availability 3045
Ship by Mon. 11 Aug to Thu. 14 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.9156
10$ 0.728
30$ 0.6344
100$ 0.3668
500$ 0.3296
1000$ 0.309

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the ZXTN2020FTA from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ZXTN2020FTA and other electronic components in the Bipolar Transistors - BJT category and beyond.

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ZXTN2020F 100V, SOT23, NPN medium power transistor Summary V > 160V, V > 100V (BR)CEV (BR)CEO I = 4A C(cont) R = 30m typical CE(sat) V < 50mV 1A CE(sat) P = 1.2W D Complementary part number: ZXTP2029F Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. Features Higher power dissipation SOT23 package High peak current Low saturation voltage 160V forward blocking voltage Applications MOSFET and IGBT gate driving Motor drive Relay, lamp and solenoid drive Pinout - top view Ordering information Device Reel size Tape width Quantity per reel (inches) (mm) ZXTN2020FTA 7 8 3,000 Device marking 853 Issue 4 - January 2006 1 www.zetex.com Zetex Semiconductors plc 2006ZXTN2020F Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage V 160 V CBO Collector-emitter voltage V 160 V (BR)CEV Collector-emitter voltage V 100 V CEO Emitter-base voltage V 7V EBO Peak pulse current I 12 A CM (a) I 4A Continuous collector current C Base current I 1A B o (a) P 1.0 W Power dissipation T =25 C D A o 8 mW/ C Linear derating factor o (b) P 1.2 W Power dissipation T =25 C D A o mW/ C 9.6 Linear derating factor o (c) P 1.56 W Power dissipation T =25 C D A o 12.5 mW/ C Linear derating factor o Operating and storage temperature T :T -55 to +150 j stg C Thermal resistance Parameter Symbol Value Unit (a) o R 125 Junction to ambient JA C/W (b) o R 104 Junction to ambient JA C/W (c) o R 80 Junction to ambient JA C/W NOTES: (a) Mounted on 18mm x 18mm x 1.6mm FR4 PCB with a very high coverage of 2 oz weight copper in still air conditions. (b) Mounted on 30mm x 30mm x 1.6mm FR4 PCB with a very high coverage of 2 oz weight copper in still air conditions. (c) as (b) above measured at t<5secs. Issue 4 - January 2006 2 www.zetex.com Zetex Semiconductors plc 2006

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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