ZXTN5551GTA Diodes Incorporated

ZXTN5551GTA electronic component of Diodes Incorporated
ZXTN5551GTA Diodes Incorporated
ZXTN5551GTA Bipolar Transistors - BJT
ZXTN5551GTA  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of ZXTN5551GTA Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. ZXTN5551GTA Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. ZXTN5551GTA
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 160 V 600 mA 130MHz 2 W Surface Mount SOT-223-3
Datasheet: ZXTN5551GTA Datasheet (PDF)
Price (USD)
1: USD 0.74 ea
Line Total: USD 0.74 
Availability : 2149
  
Ship by Wed. 03 Sep to Fri. 05 Sep
QtyUnit Price
1$ 0.74
10$ 0.4537
100$ 0.2783
500$ 0.2123
1000$ 0.1848
2000$ 0.1716
5000$ 0.1474
10000$ 0.143
25000$ 0.1419

Availability 2149
Ship by Wed. 03 Sep to Fri. 05 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.74
10$ 0.4537
100$ 0.2783
500$ 0.2123
1000$ 0.1848
2000$ 0.1716
5000$ 0.1474
10000$ 0.143
25000$ 0.1419


Availability 480
Ship by Fri. 12 Sep to Wed. 17 Sep
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.5854
50$ 0.3539
150$ 0.2856
1000$ 0.2342
2000$ 0.216
5000$ 0.2051

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Category
Brand Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the ZXTN5551GTA from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ZXTN5551GTA and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NOT RECOMMENDED FOR NEW DESIGN A Product Line of USE DZT5551 Diodes Incorporated ZXTN5551G 160V NPN VOLTAGE TRANSISTOR Features Mechanical Data BV > 160V Case: SOT223 CEO Case material: Molded Plastic. Green Molding Compound. BV > 6V EBO UL Flammability Rating 94V-0 I = 600mA Continuous Collector Current C Moisture Sensitivity: Level 1 per J-STD-020 Low Saturation Voltage (150mV max 10mA) Terminals: Matte Tin Finish Leads, Solderable per MIL-STDF-202 h specified up to 50mA for a high gain hold up FE Method 208 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Weight: 0.112 grams (Approximate) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Applications High Voltage Amplification SOT223 Device Schematic Top View Pin-Out Top View Ordering Information (Note 4) Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel ZXTN5551GTA ZXTN5551 7 12 1,000 ZXTN5551GTC ZXTN5551 13 12 4,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See NOT RECOMMENDED FOR NEW DESIGN A Product Line of USE DZT5551 Diodes Incorporated ZXTN5551G Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V 180 V CBO Collector-Emitter Voltage V 160 V CEO Emitter-Base Voltage V 6 V EBO Continuous Collector Current I 600 mA C Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) 2 W P D Thermal Resistance, Junction to Ambient (Note 5) R 62.5 C/W JA Thermal Resistance, Junction to Leads (Note 6) 34.05 C/W R JL Operating and Storage Temperature Range T , T -55 to +150 C J STG Notes: 5. Device mounted on 50mm X 50mm X 1.6mm FR-4 PCB with high coverage of single sided 1 oz. copper, in still air condition 6. Thermal resistance from junction to solder-point (at the end of the collector lead). 2.00 1 V CE(sat) 1.75 Limited 1.50 50mmx50mmx1.6mm 1oz Copper 100m DC 1.25 1s 1.00 100ms 0.75 Single Pulse 10m 10ms T =25C amb 0.50 1ms 50mmx50mmx1.6mm 0.25 1oz Copper 100s 1m 0.00 110 100 0 20 40 60 80 100 120 140 160 V Collector-Emitter Voltage (V) Temperature (C) CE Safe Operating Area Derating Curve 70 100 Single Pulse T =25C amb 60 T =25C amb 50mmx50mmx1.6mm 1oz Copper 50mmx50mmx1.6mm 50 1oz Copper D=0.5 40 10 30 D=0.2 20 Single Pulse D=0.05 10 D=0.1 0 1 100 1m 10m 100m 1 10 100 1k 100 1m 10m 100m 1 10 100 1k Pulse Width (s) Pulse Width (s) Transient Thermal Impedance Pulse Power Dissipation 2 of 6 November 2012 ZXTN5551G Diodes Incorporated www.diodes.com Document number: DS33671 Rev. 3 - 3 I Collector Current (A) Thermal Resistance (C/W) C Max Power Dissipation (W) Maximum Power (W)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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