A Product Line of Diodes Incorporated ZXTN620MA 80V NPN LOW SATURATION TRANSISTOR Features and Benefits Mechanical Data BV > 80V Case: DFN2020B-3 CEO I = 3.5A Continuous Collector Current Case Material: Molded Plastic. Green Molding Compound. C Low Saturation Voltage (185mV max 1A) Terminals: Pre-Plated NiPdAu leadframe. R = 68 m for a low equivalent On-Resistance SAT Nominal Package Height: 0.6mm h specified up to 5A for high current gain hold up FE UL Flammability Rating 94V-0 Low profile 0.6mm high package for thin applications Moisture Sensitivity: Level 1 per J-STD-020 R efficient, 60% lower than SOT23 JA Weight: 0.01 grams (approximate) 2 4mm footprint, 50% smaller than SOT23 Lead-Free, RoHS Compliant (Note 1) Halogen and Antimony Free.Gree Device (Note 2) Applications Qualified to AEC-Q101 Standards for High Reliability MOSFET Gate Driving DCDC Converters Charging circuits Motor Control Power switches DFN2020B-3 C B E Top View Device Symbol Bottom View Bottom View Pin-Out Ordering Information Product Marking Reel size (inches) Tape width (mm) Quantity per reel ZXTN620MATA SE 7 8 3000 Notes: 1. No purposefully added lead. 2. Diodes Inc sGree policy can be found on our website at A Product Line of Diodes Incorporated ZXTN620MA Maximum Ratings T = 25C unless otherwise specified A Parameter Symbol Limit Unit Collector-Base Voltage 100 V CBO Collector-Emitter Voltage 80 V V CEO Emitter-Base Voltage 7 V EBO Peak Pulse Current 5 I CM (Note 3) 3.5 Continuous Collector Current I A C (Note 4) 3.8 Base Current I 1 B Thermal Characteristics T = 25C unless otherwise specified A Characteristic Symbol Value Unit 1.5 (Note 3) 12 W Power Dissipation P D Linear Derating Factor 2.45 mW/C (Note 4) 19.6 (Note 3) 83 Thermal Resistance, Junction to Ambient R JA (Note 4) 51 C/W Thermal Resistance, Junction to Lead (Note 5) 16.8 R JL Operating and Storage Temperature Range T T -55 to +150 C J, STG 2 Notes: 3. For a device surface mounted on 31mm x 31mm (10cm ) FR4 PCB with high coverage of single sided 1oz copper, in still air conditions the device is measured when operating in a steady-state condition. The entire exposed collector pad is attached to the heatsink. 4. Same as note (3), except the device is measured at t 5 sec. 5. For a single device, thermal resistance from junction to solder-point (at the end of the drain lead). 2 of 7 January 2011 ZXTN620MA Diodes Incorporated www.diodes.com Document Number DS31894 Rev. 5 - 2