X-On Electronics has gained recognition as a prominent supplier of ZXTN649FTA bipolar transistors - bjt across the USA, India, Europe, Australia, and various other global locations. ZXTN649FTA bipolar transistors - bjt are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for bipolar transistors - bjt, ensuring timely deliveries around the world.

ZXTN649FTA Diodes Incorporated

ZXTN649FTA electronic component of Diodes Incorporated
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See Product Specifications
Part No.ZXTN649FTA
Manufacturer: Diodes Incorporated
Category:Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 25 V 3 A 725 mW Surface Mount SOT-23-3
Datasheet: ZXTN649FTA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5458 ea
Line Total: USD 0.55

Availability - 5365
Ships to you between
Thu. 20 Jun to Mon. 24 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5075 - WHS 1


Ships to you between Thu. 20 Jun to Mon. 24 Jun

MOQ : 1
Multiples : 1
1 : USD 0.529
10 : USD 0.3737
100 : USD 0.1541
1000 : USD 0.115
3000 : USD 0.092
9000 : USD 0.0794
24000 : USD 0.0736
45000 : USD 0.0713

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Continuous Collector Current
Maximum Power Dissipation
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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We are delighted to provide the ZXTN649FTA from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ZXTN649FTA and other electronic components in the Bipolar Transistors - BJT category and beyond.

A Product Line of Diodes Incorporated ZXTN649F 25V NPN LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data Case: SOT23 BV > 25V CEO BV > 35V forward blocking voltage Case Material: molded plastic, Green molding compound CBO I = 3A high Continuous Collector Current C UL Flammability Classification Rating 94V-0 Low saturation voltage, V < 120mV 1A Moisture Sensitivity: Level 1 per J-STD-020 CE(SAT) R = 77m for a low equivalent On-Resistance CE(SAT) Terminals: Finish Matte Tin Plated Leads, Solderable per 725mW Power dissipation MIL-STD-202, Method 208 h specified up to 6A for high current gain hold up FE Weight 0.008 grams (approximate) Complementary PNP Type: ZXTP749F Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Applications Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability MOSFET gate drivers Power switching in automotive and industrial applications Motor drive and control SOT23 C E C B B E Top View Device Symbol Top View Pin-Out Ordering Information (Note 4) Product Marking Reel size (inches) Tape width (mm) Quantity per reel ZXTN649FTA 1N7 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See A Product Line of Diodes Incorporated ZXTN649F Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V 35 V CBO Collector-Emitter Voltage V 25 V CEO Emitter-Base Voltage 7 V V EBO Continuous Collector Current 3 A I C Peak Pulse Current 6 A I CM Base Current 500 mA I B Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 5) P 725 mW D Thermal Resistance, Junction to Ambient (Note 5) R 172 C/W JA Thermal Resistance, Junction to Leads (Note 6) R 79 C/W JL Operating and Storage Temperature Range T T -55 to +150 C J, STG ESD Ratings (Note 7) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 8,000 V 3B Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 5. For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions the device is measured when operating in a steady-state condition. 6. Thermal resistance from junction to solder-point (at the end of collector lead). 7. Refer to JEDEC specification JESD22-A114 and JESD22-A115. ZXTN649F 2 of 7 January 2013 Document number: DS31900 Rev. 3 - 2 Diodes Incorporated www.diodes.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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