X-On Electronics has gained recognition as a prominent supplier of ZXTP19060CZTA bipolar transistors - bjt across the USA, India, Europe, Australia, and various other global locations. ZXTP19060CZTA bipolar transistors - bjt are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for bipolar transistors - bjt, ensuring timely deliveries around the world.

ZXTP19060CZTA Diodes Incorporated

ZXTP19060CZTA electronic component of Diodes Incorporated
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Part No.ZXTP19060CZTA
Manufacturer: Diodes Incorporated
Category:Bipolar Transistors - BJT
Description: Diodes Incorporated Bipolar Transistors - BJT PNP 60V 4.5A
Datasheet: ZXTP19060CZTA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4311 ea
Line Total: USD 0.43

Availability - 819
Ships to you between
Thu. 20 Jun to Tue. 25 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
819 - WHS 1


Ships to you between
Thu. 20 Jun to Tue. 25 Jun

MOQ : 1
Multiples : 1
1 : USD 0.4311
10 : USD 0.3862
30 : USD 0.3639
100 : USD 0.3402
500 : USD 0.3275
1000 : USD 0.3205

2436 - WHS 2


Ships to you between Wed. 19 Jun to Fri. 21 Jun

MOQ : 1
Multiples : 1
1 : USD 0.851
10 : USD 0.7475
100 : USD 0.5164
500 : USD 0.4313
1000 : USD 0.3669
2000 : USD 0.3277
5000 : USD 0.3255

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the ZXTP19060CZTA from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ZXTP19060CZTA and other electronic components in the Bipolar Transistors - BJT category and beyond.

ZXTP19060CZ 60V PNP medium transistor in SOT89 Summary BV > -60V CEO BV > -7V ECO I = 4.5A C(cont) V < -80mV -1A CE(sat) R = 50mV CE(sat) P = 2.4W D Complementary part number ZXTN19060CZ Description C Packaged in the SOT89 outline this new low saturation PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. B Features High gain E Low saturation voltage High peak current 7V reverse blocking voltage Applications E High side driver Motor drive C C Load disconnect switch B Ordering information Pinout - top view Device Reel size Tape width Quantity (inches) (mm) per reel ZXTP19060CZTA 7 12 1000 Device marking 1M2 Issue 1- February 2008 1 www.zetex.com Zetex Semiconductors plc 2008ZXTP19060CZ Absolute maximum ratings Parameter Symbol Limit Unit Collector-Base voltage V -60 V CBO Collector-Emitter voltage V -60 V CEO Emitter-Collector voltage (reverse blocking) V -7 V ECX Emitter-Base voltage V -7 V EBO (c) I -4.5 A Continuous Collector current C Base current I -1 A B Peak pulse current I -7 A CM (a) P 1.1 W Power dissipation at T =25C D A 8.8 mW/C Linear derating factor (b) P 1.8 W Power dissipation at T =25C D A 14.4 mW/C Linear derating factor (c) P 2.4 W Power dissipation at T =25C D A 19.2 mW/C Linear derating factor (d) P 4.46 W Power dissipation at T =25C D A 35.7 mW/C Linear derating factor (e) P 26.7 W Power dissipation at T =25C D C 213 mW/C Linear derating factor Operating and storage temperature range T , T -55 to 150 C j stg Thermal resistance Parameter Symbol Limit Unit (a) R 117 C/W Junction to ambient UJA (b) R 68 C/W Junction to ambient UJA (c) R 51 C/W Junction to ambient UJA (d) R 28 C/W Junction to ambient UJA (e) R 4.69 C/W Junction to case UJC NOTES: (a) For a device surface mounted on 15mm x 15mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) Mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (c) Mounted on 50mm x 50mm x 0.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. (d) As (c) above measured at t<10 seconds. (e) Junction to case (collector tab). Typical Issue 1- February 2008 2 www.zetex.com Zetex Semiconductors plc 2008

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Diodes
DIODES INC
DIODES INC / ZETEX
DIODES INC.
Diodes Inc. / Pericom
Diodes Zetex
DiodesZetex
PAM(Diodes Inc)
PER
Pericom
PERICOM SEMI
Pericom Semiconductor
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ZTX

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