X-On Electronics has gained recognition as a prominent supplier of ZXTP2008GTA bipolar transistors - bjt across the USA, India, Europe, Australia, and various other global locations. ZXTP2008GTA bipolar transistors - bjt are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for bipolar transistors - bjt, ensuring timely deliveries around the world.

ZXTP2008GTA

ZXTP2008GTA electronic component of Diodes Incorporated
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See Product Specifications
Part No.ZXTP2008GTA
Manufacturer: Diodes Incorporated
Category:Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 30 V 5.5 A 110MHz 3 W Surface Mount SOT-223-3
Datasheet: ZXTP2008GTA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.8061 ea
Line Total: USD 0.81

Availability - 1852
Ships to you between
Wed. 05 Jun to Fri. 07 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
874 - WHS 1


Ships to you between
Thu. 06 Jun to Tue. 11 Jun

MOQ : 1
Multiples : 1
1 : USD 0.9234
10 : USD 0.7675
30 : USD 0.6886
100 : USD 0.5426
500 : USD 0.4953
1000 : USD 0.4716

1852 - WHS 2


Ships to you between Wed. 05 Jun to Fri. 07 Jun

MOQ : 1
Multiples : 1
1 : USD 0.8061
10 : USD 0.6705
100 : USD 0.537
500 : USD 0.4681
1000 : USD 0.391
2000 : USD 0.3737
5000 : USD 0.3691
10000 : USD 0.36
25000 : USD 0.3576

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We proudly offer the ZXTP2008GTA Bipolar Transistors - BJT at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the ZXTP2008GTA Bipolar Transistors - BJT.

ZXTP2008G Green 30V PNP LOW SATURATION TRANSISTOR IN SOT223 Features Mechanical Data BV > -30V CEO Case: SOT223 I = -5.5A Continuous Collector Current C Case Material: Molded Plastic. Green Molding Compound. I = -20A Peak Pulse Current UL Flammability Rating 94V-0 CM Low Saturation Voltage V < -60mV max -1A CE(SAT) Moisture Sensitivity: Level 1 per J-STD-020 R = 31m -5.5A for Low Equivalent On-Resistance SAT Terminals: Finish Matte Tin Plated Leads. Solderable per MIL- Exceptional Gain Linearity Down to -10mA STD-202, Method 208 Weight: 0.112 grams (Approximate) h Specified up to -20A for High Gain Hold Up FE Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Applications Qualified to AEC-Q101 Standards for High Reliability DC-DC Converters MOSFET Gate Drivers Charging Circuits Power Switches Motor Control SOT223 Device Schematic Pin-Out Top View Top View Ordering Information (Note 4) Part Number Marking Reel Size (inches) Tape Width (mm) Quantity per Reel ZXTP2008GTA ZXTP2008 7 12 1,000 Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See ZXTP2008G Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage -50 V V CBO Collector-Emitter Voltage -30 V V CEO Emitter-Base Voltage -7 V V EBO Continuous Collector Current -5.5 A I C Peak Pulse Current I -20 A CM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit 3.0 (Note 5) Power Dissipation 24 W P D Linear Derating Factor mW/C 1.6 (Note 6) 12.8 (Note 5) R 42 JA Thermal Resistance, Junction to Ambient (Note 6) R 78 C/W JA Thermal Resistance, Junction to Lead (Note 7) R 8.8 JL Operating and Storage Temperature Range T T -55 to +150 C J, STG ESD Ratings (Note 8) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge Machine Model ESD MM 400 V C Notes: 5. For a device mounted with the collector lead on 52mm x 52mm 2oz copper that is on a single-sided 1.6mm FR4 PCB device is measured under still air conditions whilst operating in steady-state. 6. Same as Note 5, except the device is mounted on 25mm x 25mm 1oz copper. 7. Thermal resistance from junction to solder-point (at the end of the collector lead). 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 ZXTP2008G December 2015 Diodes Incorporated www.diodes.com Document number: DS33708 Rev. 2 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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