ZXTP2008ZTA Diodes Incorporated

ZXTP2008Z 30V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BV = -30V : R = 24m I = -5.5A CEO SAT C DESCRIPTION Packaged in the SOT89 outline this new low saturation 30V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line switching and various driving and power management functions. FEATURES 5.5 amps continuous current Up to 20 amps peak current Very low saturation voltages Exceptional gain linearity down to 10mA Excellent high current gain hold up APPLICATIONS DC - DC converters MOSFET gate drivers Charging circuits Power switches Motor control PINOUT ORDERING INFORMATION DEVICE REEL TAPE WIDTH QUANTITY PER SIZE REEL ZXTP2008ZTA 7 12mm 1000 units embossed DEVICE MARKING TOP VIEW 949 ISSUE 1 - JUNE 2005 1 SOT89ZXTP2008Z ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL LIMIT UNIT Collector-base voltage BV -50 V CBO Collector-emitter voltage BV -30 V CEO Emitter-base voltage BV -7 V EBO (a) Continuous collector current I -5.5 A C Peak pulse current I -20 A CM (a) Power dissipation at T =25C P 1.5 W A D Linear derating factor 12 mW/C (b) Power dissipation at T =25C P 2.1 W A D Linear derating factor 16.8 mW/C Operating and storage temperature range T,T -55 to 150 C j stg THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT (a) Junction to Ambient R 83 C/W JA (b) Junction to Ambient R 60 C/W JA NOTES (a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. ISSUE 1 - JUNE 2005 2