ZXTP2009ZQ 40V PNP HIGH GAIN LOW SATURATION MEDIUM POWER TRANSISTOR Description Mechanical Data This bipolar junction transistor (BJT) is designed to meet the stringent Case: SOT89 requirement of automotive applications. Case Material: Molded Plastic. Green Molding Compound. UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: FinishMatte Tin Plated Leads. Solderable per MIL- STD-202, Method 208 Weight: 0.05 grams (Approximate) Features Applications BV > -40V CEO DC-DC Converters I = -5.5A Continuous Collector Current C MOSFET Gate Drivers I = -15A Peak Pulse Current CM Charging Circuits Very Low Saturation Voltage V < -60mV max -1A CE(SAT) Power Switches R = 29m -5.5A for Low Equivalent On-Resistance SAT Motor Control Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) SOT89 E C C B Device Schematic Pin-Out Top View Top View Ordering Information (Notes 4 and 5) Part Number Marking Reel Size (inches) Tape Width (mm) Quantity per Reel ZXTP2009ZQTA 53Z 7 12 1000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See ZXTP2009ZQ Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V -50 V CBO Collector-Base Voltage V -50 V CBS Collector-Emitter Voltage V -40 V CEO Emitter-Base Voltage -7 V VEBO Continuous Collector Current -5.5 A I C Peak Pulse Current -15 A I CM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit 0.9 (Note 6) 7.2 1.5 (Note 7) Power Dissipation 12 W P D Linear Derating Factor mW/C 2.1 (Note 8) 16.8 3 (Note 9) 24 (Note 6) 139 R JA (Note 7) 83 Thermal Resistance, Junction to Ambient C/W (Note 8) 60 (Note 9) 42 R JA Operating and Storage Temperature Range T T -55 to +150 C J, STG ESD Ratings (Note 10) Characteristic Symbol Value Unit JEDEC Class Electrostatic DischargeHuman Body Model ESD HBM 4000 V 3A Electrostatic DischargeMachine Model ESD MM 400 V C Notes: 6. For a device mounted with the collector lead on 15mm 15mm 1oz copper that is on a single-sided 1.6mm FR-4 PCB device is measured under still air conditions whilst operating in steady-state. 7. Same as Note 6, except the device is mounted on 25mm 25mm 1oz copper. 8. Same as Note 6, except the device is mounted on 50mm 50mm 1oz copper. 9. Same as Note 6, except the device is mounted on 25mm 25mm measured at t<5 secs. 10.Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 October 2018 ZXTP2009ZQ Diodes Incorporated www.diodes.com Document number: DS40911 Rev. 1 - 2