ZXTP2012GTA Diodes Incorporated

ZXTP2012GTA electronic component of Diodes Incorporated
ZXTP2012GTA Diodes Incorporated
ZXTP2012GTA Bipolar Transistors - BJT
ZXTP2012GTA  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of ZXTP2012GTA Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. ZXTP2012GTA Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. ZXTP2012GTA
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT 60V PNP Low Sat
Datasheet: ZXTP2012GTA Datasheet (PDF)
Price (USD)
1000: USD 0.4063 ea
Line Total: USD 406.3 
Availability : 18430
  
Ship by Thu. 20 Nov to Wed. 26 Nov
QtyUnit Price
1000$ 0.4063
2000$ 0.3639
3000$ 0.359

Availability 6786
Ship by Tue. 18 Nov to Thu. 20 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.7125
10$ 1.0296
100$ 0.627
500$ 0.4928
1000$ 0.3938


Availability 237650
Ship by Thu. 20 Nov to Wed. 26 Nov
MOQ : 1000
Multiples : 1000
QtyUnit Price
1000$ 0.4316
2000$ 0.3961
3000$ 0.3898


Availability 203
Ship by Tue. 18 Nov to Thu. 20 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.708
10$ 1.0738
27$ 0.714
74$ 0.6748
250$ 0.6496


Availability 1940
Ship by Thu. 20 Nov to Wed. 26 Nov
MOQ : 1000
Multiples : 1000
QtyUnit Price
1000$ 0.4316
2000$ 0.3961
3000$ 0.3898


Availability 323980
Ship by Thu. 20 Nov to Wed. 26 Nov
MOQ : 1000
Multiples : 1000
QtyUnit Price
1000$ 0.4375


Availability 770
Ship by Thu. 20 Nov to Wed. 26 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.0416
10$ 0.8496
30$ 0.5661
100$ 0.4457
500$ 0.4081
1000$ 0.3892


Availability 32980
Ship by Thu. 20 Nov to Wed. 26 Nov
MOQ : 1000
Multiples : 1000
QtyUnit Price
1000$ 0.4425


Availability 18430
Ship by Thu. 20 Nov to Wed. 26 Nov
MOQ : 1000
Multiples : 1000
QtyUnit Price
1000$ 0.4063
2000$ 0.3639
3000$ 0.359

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Height
Length
Width
Brand
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the ZXTP2012GTA from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ZXTP2012GTA and other electronic components in the Bipolar Transistors - BJT category and beyond.

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ZXTP2012G Green 60V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 Features Mechanical Data BV > -60V Case: SOT223 CEO I = -5.5A Continuous Collector Current Case Material: Molded Plastic. Green Molding Compound. C I = -15A Peak Pulse Current UL Flammability Rating 94V-0 CM Low Saturation Voltage V < -70mV Max -1A Moisture Sensitivity: Level 1 per J-STD-020 CE(SAT) R = 39m -5A for Low Equivalent On-Resistance Terminals: Finish Matte Tin Plated Leads. Solderable per SAT h Specified up to -10A for High Gain Hold Up MIL-STD-202, Method 208 FE Lead-Free Finish RoHS Compliant (Notes 1 & 2) Weight: 0.112 grams (Approximate) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Applications DC-DC Converters MOSFET Gate Drivers Charging Circuits Power Switches Motor Control SOT223 Pin-Out Top View Device Schematic Top View Ordering Information (Note 4) Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel ZXTP2012GTA AEC-Q101 ZXTP2012 7 12 1,000 Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See ZXTP2012G Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V -100 V CBO Collector-Emitter Voltage V -60 V CEO Emitter-Base Voltage V -7 V EBO Continuous Collector Current I -5.5 A C Peak Pulse Current -15 A ICM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit 3.0 (Note 5) 24 Power Dissipation W P D Linear Derating Factor 1.6 mW/C (Note 6) 12.8 (Note 5) 42 R JA Thermal Resistance, Junction to Ambient (Note 6) 78 C/W R JA Thermal Resistance, Junction to Lead (Note 7) 8.8 R JL Operating and Storage Temperature Range -55 to +150 C T T J, STG ESD Ratings (Note 8) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge Machine Model ESD MM 400 V C Notes: 5. For a device mounted with the collector lead on 52mm x 52mm 2oz copper that is on a single-sided 1.6mm FR4 PCB device is measured under still air conditions whilst operating in steady-state. 6. Same as Note 5, except the device is mounted on 25mm x 25mm 1oz copper. 7. Thermal resistance from junction to solder-point (at the end of the collector lead). 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 ZXTP2012G December 2015 Diodes Incorporated www.diodes.com Document number: DS33712 Rev. 2 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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