X-On Electronics has gained recognition as a prominent supplier of ZXTP25012EFHTA BIPOLAR TRANSISTORS - BJT across the USA, India, Europe, Australia, and various other global locations. ZXTP25012EFHTA BIPOLAR TRANSISTORS - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for BIPOLAR TRANSISTORS - BJT, ensuring timely deliveries around the world.

ZXTP25012EFHTA Diodes Incorporated

ZXTP25012EFHTA electronic component of Diodes Incorporated
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See Product Specifications
Part No.ZXTP25012EFHTA
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 12 V 4 A 310MHz 1.25 W Surface Mount SOT-23-3
Datasheet: ZXTP25012EFHTA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.667 ea
Line Total: USD 0.67

Availability - 2266
Ships to you between
Fri. 28 Jun to Tue. 02 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
7 - WHS 1


Ships to you between
Mon. 01 Jul to Thu. 04 Jul

MOQ : 1
Multiples : 1
1 : USD 0.5323
10 : USD 0.4467
30 : USD 0.4033
100 : USD 0.3611
500 : USD 0.3355
1000 : USD 0.3218

5176 - WHS 2


Ships to you between Fri. 28 Jun to Tue. 02 Jul

MOQ : 1
Multiples : 1
1 : USD 0.667
10 : USD 0.5738
100 : USD 0.3968
500 : USD 0.3323
1000 : USD 0.2829
3000 : USD 0.2507
6000 : USD 0.2369
9000 : USD 0.2196
24000 : USD 0.2185

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the ZXTP25012EFHTA from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ZXTP25012EFHTA and other electronic components in the Bipolar Transistors - BJT category and beyond.

ZXTP25012EFH 12V, SOT23, PNP medium power transistor Summary BV > -12V CEO h > 500 FE I = 4A C(cont) R = 40m CE(sat) V < -65mV 1A CE(sat) P = 1.25W D Complementary part number ZXTN25012EFH Description C Advanced process capability and package design have been used to maximise the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally B suited to applications where space is at a premium. Features E High power dissipation SOT23 package High peak current Very high gain, 500 minimum E Low saturation voltage C Applications MOSFET and IGBT gate driving B DC - DC converters Pinout - top view Motor drive High side driver Line disconnect switch Ordering information Device Reel size Tape width Quantity (inches) (mm) per reel ZXTP25012EFHTA 7 8 3000 Device marking 1E8 Issue 2 - October 2007 1 www.zetex.com Zetex Semiconductors plc 2007ZXTP25012EFH Absolute maximum ratings Parameter Symbol Limit Unit Collector-base voltage V -12 V CBO Collector-emitter voltage V -12 V CEO Emitter-base voltage V -7 V EBO (b) I -4 A Continuous collector current C Base current I -1 A B Peak pulse current I -10 A CM (a) P 0.73 W Power dissipation at T =25C D amb Linear derating factor 5.84 mW/C (b) P 1.05 W Power dissipation at T =25C D amb Linear derating factor 8.4 mW/C (c) P 1.25 W Power dissipation at T =25C D amb Linear derating factor 9.6 mW/C (d) P 1.81 W Power dissipation at T =25C D amb Linear derating factor 14.5 mW/C Operating and storage temperature range T , T -55 to 150 C j stg Thermal resistance Parameter Symbol Limit Unit (a) R 171 C/W Junction to ambient JA (b) R 119 C/W Junction to ambient JA (c) R 100 C/W Junction to ambient JA (d) R 69 C/W Junction to ambient JA NOTES: (a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (d) As (c) above measured at t<5secs Issue 2 - October 2007 2 www.zetex.com Zetex Semiconductors plc 2007

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Diodes
DIODES INC
DIODES INC / ZETEX
DIODES INC.
Diodes Inc. / Pericom
Diodes Zetex
DiodesZetex
PAM(Diodes Inc)
PER
Pericom
PERICOM SEMI
Pericom Semiconductor
Pericom Technology
Pericom/Diodes
ZTX

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