We are the renowned ZXTP5240F-7 Bipolar Transistors - BJT seller and distributer in the USA, India, Europe, Australia, and beyond. ZXTP5240F-7 Bipolar Transistors - BJT is a manufacturer from Diodes Incorporated. X-ON Electronics Components provides affordable electronic Bipolar Transistors - BJT in the USA.

ZXTP5240F-7

ZXTP5240F-7 electronic component of Diodes Incorporated
Part No.ZXTP5240F-7
Manufacturer: Diodes Incorporated
Category:Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT 40V PNP SS Mid-Perf Transistor
Datasheet: ZXTP5240F-7 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4865 ea
Line Total: USD 0.49

57985 - Global Stock
Ships to you between
Wed. 05 Jun to Fri. 07 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1290 - WHS 1


Ships to you between
Thu. 06 Jun to Tue. 11 Jun

MOQ : 5
Multiples : 5
5 : USD 0.1593
50 : USD 0.1289
150 : USD 0.1137
500 : USD 0.1023
3000 : USD 0.0887
6000 : USD 0.0841

57985 - WHS 2


Ships to you between Wed. 05 Jun to Fri. 07 Jun

MOQ : 1
Multiples : 1
1 : USD 0.4715
10 : USD 0.2748
100 : USD 0.1438
1000 : USD 0.1162
3000 : USD 0.0897
9000 : USD 0.0851
24000 : USD 0.0828
45000 : USD 0.0747
99000 : USD 0.0725

We proudly offer the ZXTP5240F-7 Bipolar Transistors - BJT at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the ZXTP5240F-7 Bipolar Transistors - BJT.
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Hts Code
Product Type
Factory Pack Quantity :
Subcategory
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ZXTP5240F 40V PNP LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data BV > -40V Case: SOT23 CEO I = -2A high Continuous Collector Current Case Material: Molded Plastic, Green Molding Compound. C I = -3A Peak Pulse Current UL Flammability Classification Rating 94V-0 CM Low Saturation Voltage -225mV Max I = -1A. Moisture Sensitivity: Level 1 per J-STD-020 C R = 90m at 0.5A for a Low Equivalent On-Resistance Terminals: Finish Matte Tin Plated Leads, Solderable per CE(SAT) 730mW Power Dissipation MIL-STD-202, Method 208 Complimentary NPN Type: ZXTN4240F Weight 0.008 grams (Approximate) Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Application Qualified to AEC-Q101 Standards for High Reliability Gate Driving MOSFETs and IGBTs Load Switch DC-DC Converters Battery Charging SOT23 E C C B B E Top View Device Symbol Top View Pin-Out Ordering Information (Note 4) Product Marking Reel Size (inches) Tape Width (mm) Quantity per Reel ZXTP5240F-7 2D5 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See ZXTP5240F Absolute Maximum Ratings ( TA = +25C, unless otherwise specified.) Characteristic Symbol Value Unit Collector-Base Voltage V -40 V CBO Collector-Emitter Voltage V -40 V CEO Emitter-Base Voltage V -5 V EBO Peak Pulse Collector Current I -3 A CM Continuous Collector Current -2 A IC Base Current -300 mA I B Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 5) P 730 mW D Power Dissipation (Note 6) P 600 mW D Thermal Resistance, Junction to Ambient Air (Note 5) R 171 C/W JA Thermal Resistance, Junction to Ambient Air (Note 6) R 209 C/W JA Thermal Resistance, Junction to Lead (Note 7) R 75 C/W JL Operating and Storage Temperature Range T , T -55 to +150 C J STG ESD Ratings (Note 8) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 5. For a device mounted with the collector lead on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB device is measured under still air conditions whilst operating in a steady-state. 6. Same as note (5), except the device is mounted on minimum recommended pad layout. 7. Thermal resistance from junction to solder-point (at the end of the collector lead). 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 ZXTP5240F April 2018 Diodes Incorporated www.diodes.com Document number: DS39609 Rev. 2 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
DIO
Diodes
DIODES INC
DIODES INC / ZETEX
DIODES INC.
Diodes Inc. / Pericom
Diodes Zetex
DiodesZetex
PAM(Diodes Inc)
PER
Pericom
PERICOM SEMI
Pericom Semiconductor
Pericom Technology
Pericom/Diodes
ZTX

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