ZXTP56020FDBQ 20V DUAL PNP LOW V TRANSISTOR CE(SAT) Features Mechanical Data BV > -20V Case: U-DFN2020-6 (SWP) (Type A) with Sidewall Plating CEO I = -2A High Continuous Collector Current (SWP) C R = 100m for a Low Equivalent On-Resistance Case Material: Molded Plastic. Green Molding Compound. UL CE(SAT) Low Saturation Voltage V < -150mV -1A Flammability Rating 94V-0 CE(SAT) Sidewall Tin Plating for Wettable Flanks in AOI Moisture Sensitivity: Level 1 per J-STD-020 P up to 2.47W for Power Demanding Applications Terminals: Finish Matte Tin, Solderable per MIL-STD-202, D Low Profile 0.6mm High Package for Thin Applications Method 208 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Weight: 0.0065 grams (Approximate) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Application Matrix LED Lighting Power Management U-DFN2020-6 (SWP) (Type A) C1 B2 E2 6 C1 C2 1 E1 B1 C2 Bottom View Device Symbol Top View Pin-Out Ordering Information (Notes 4 & 5) Part Number Marking Reel Size (inches) Tape Width (mm) Quantity Per Reel ZXTP56020FDBQ-7 1W9 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See ZXTP56020FDBQ Absolute Maximum Ratings Q1 & Q2 ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V -20 V CBO Collector-Emitter Voltage V -20 V CEO Emitter-Base Voltage V -7 V EBO Continuous Collector Current I -2 A C Peak Pulse Collector Current I -3 A CM Base Current -300 mA IB Peak Base Current -1 A I BM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit (Notes 6 & 8) 405 (Notes 6 & 9) 510 Power Dissipation mW PD (Notes 7 & 8) 1650 (Notes 7 & 9) 2470 (Notes 6 & 8) 308 (Notes 6 & 9) 245 Thermal Resistance, Junction to Ambient C/W R JA (Notes 7 & 8) 76 (Notes 7 & 9) 51 Thermal Resistance, Junction to Lead (Note 10) R 18 C/W JL Operating and Storage Temperature Range -55 to +150 C T T J, STG ESD Ratings (Note 11) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge Machine Model ESD MM 400 V C Notes: 6. For a device mounted with the exposed collector pads on minimum recommended pad layout that is on a single-sided 1.6mm FR-4 PCB device is measured under still air conditions whilst operating in a steady-state. 2 7. Same as note (6), except the device is mounted with the collector pad on 28mm x 28mm (8cm ) 2oz copper. 8. For a dual device with one active die. 9. For dual device with 2 active die running at equal power. 10. Thermal resistance from junction to solder-point (on the exposed collector pads). 11. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 ZXTP56020FDBQ April 2017 www.diodes.com Diodes Incorporated Datasheet number: DS38567 Rev.1 - 2