Product Information

DP2101W

DP2101W electronic component of Doeshare

Datasheet
20V 2A 90mΩ@4.5V,1.5A 0.7W 0.62V@250uA 29pF@10V P Channel 290pF@10V 3.9nC@4.5V -55℃~+150℃@(Tj) SOT-323 MOSFETs ROHS

Manufacturer: Doeshare
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10: USD 0.0505 ea
Line Total: USD 0.505

97 - Global Stock
Ships to you between
Thu. 11 Apr to Tue. 16 Apr
MOQ: 10  Multiples: 10
Pack Size: 10
Availability Price Quantity
97 - Global Stock


Ships to you between
Thu. 11 Apr to Tue. 16 Apr

MOQ : 10
Multiples : 10

Stock Image

DP2101W
Doeshare

10 : USD 0.0505
100 : USD 0.0416
300 : USD 0.0372
3000 : USD 0.03
6000 : USD 0.0274
9000 : USD 0.0261

     
Manufacturer
Product Category
Category
Rohs
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Reverse Transfer Capacitance Crss@Vds
Type
Input Capacitance Ciss@Vds
Total Gate Charge Qg@Vgs
Operating Temperature
LoadingGif

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The DP2101W P Channel MOSFET ROHS is a small size SOT-323 dual N-Channel MOSFET manufactured by Doeshare. It has drains connected together, sources connected separately and gate separated. It is rated to operate up to a maximum voltage of 20V and a maximum current of 2A with a RDS(ON) value of 90mO @4.5V. It has an ID Gate of 1.5A with a P channel rating of 0.7W at 0.62V, a parasitic capacitance of 29pF at 10V gate, a reverse transfer capacitance of 290pF at 10V gate and a gate charge of 3.9nC at 4.5V. It has an operating temperature range from -55? to +150? (Tj).

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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