Product Information

STN254050UL50

STN254050UL50 electronic component of Eaton

Datasheet
ESD Suppressors TVS Diodes TVS Diode ESD Suppressor DFN2510-10L Unidirectional 5 Vdc Reverse Standoff Voltage 0.5 pF

Manufacturer: Eaton
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.297 ea
Line Total: USD 0.297

46546 - Global Stock
Ships to you between
Thu. 11 Apr to Mon. 15 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
14439 - Global Stock


Ships to you between Thu. 11 Apr to Mon. 15 Apr

MOQ : 1
Multiples : 1
1 : USD 0.3979
10 : USD 0.3105
100 : USD 0.1886
500 : USD 0.1771
1000 : USD 0.1265
3000 : USD 0.115
9000 : USD 0.107
24000 : USD 0.107
45000 : USD 0.1035

     
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Technical Data 11143 Effective September 2020 STN254050UL50 and STN254050UL50H TVS Diode array ESD suppressor Applications Digital visual interface (DVI) Display port TM interface MDDI ports PCI express SATA interfaces High definition multi-media interface (HDMI) Environmental compliance and general Product features specifications Solid-state silicon-avalanche technology IEC61000-4-2 (ESD) Up to four I/O lines of protection Up to 20 kV (air) Low operating voltage Up to 20 kV (contact) Ultra low capacitance: 0.25 pF typical (I/O IEC61000-4-5 (Lightning) 5 A (8/20 s) to I/O) HALOGEN Low operating and clamping voltage Pb HF Low leakage current FREE High ESD withstand option available Meets moisture sensitivity level (MSL) 3 Ordering part number Molding compound flammability rating: UL 94V-0 ST N25 4 050 U L50 H Termination finish: Ni/Pd/Au Family Package (N25- DFN2510) Number of channels (4- 4) Operating voltage (050- 5 V) Bi/Uni directional (U- Uni) Capacitance (L50- 0.5 pF) Optional suffix (H-High ESD) Pin out/functional diagramTechnical Data 11143 STN254050UL50 and STN254050UL50H Effective September 2020 TVS Diode array ESD suppressor Absolute maximum ratings (+25 C, RH=45%-75%, unless otherwise noted) Parameter Symbol Unit Value STN254050UL50H STN254050UL50 Peak pulse power dissipation on 8/20 s waveform Ppp 100 100 W ESD per IEC 61000-4-2 (Air) V +/-20 +/-15 kV ESD ESD per IEC 61000-4-2 (Contact) +/-20 +/-8 Lead soldering temperature T +260 (10 seconds) +260 (10 seconds) C L Operating junction temperature range T -55 to +125 -55 to +125 C J Storage temperature range T -55 to +150 -55 to +150 C STG Electrical characteristics (+25 C) STN254050UL50H Parameter Test condition Minimum Typical Maximum Symbol (Units) Reverse working voltage I/O to GND - - 5 V (V) RWM Reverse breakdown voltage I/O to GND 6.0 - 8.5 V (V) BR I = 1 mA T Reverse leakage current I/O to GND - - 0.5 I (A) R V = 5 V RWM Clamping voltage* I = 1 A, t = 8/20 s - 9.5 10.5 V (V) PP p C I = 5 A, t = 8/20 s - 13 15 V (V) PP p C - - - - Junction capacitance V = 0 V, f = 1 MHz - 0.5 0.65 C (pF) RWM J I/O pin to GND V = 0 V, f = 1 MHz - 0.25 0.35 C (pF) RWM J Between I/O pins STN254050UL50 Parameter Test condition Minimum Typical Maximum Symbol (Units) Reverse working voltage I/O to GND - - 5.0 V (V) RWM Reverse breakdown voltage I/O to GND 6.0 - 9.0 V (V) BR I = 1 mA T Reverse leakage current I/O to GND 0.1- 1.0- I (A) R V = 5.0 V RWM Clamping voltage* I = 1 A, t = 8/20 s - 9.0 6.5 V (V) PP p C I = 3.5 A, t = 8/20 s - 11 12 V (V) PP p C Junction capacitance V = 0 V, f = 1 MHz - 0.5 0.65 C (pF) RWM J I/O pin to GND V = 0 V, f = 1 MHz - 0.25 0.4 C (pF) RWM J Between I/O pins * Non-repetitive current pulse, according to IEC61000-4-5. 2 www.eaton.com/electronics

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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