EMB09N03V NChannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: D BVDSS 30V 9m RDSON(MAX.) ID 20A G S UIS,Rg100%Tested PbFreeLeadPlating&HalogenFree ABSOLUTEMAXIMUMRATINGS(T =25CUnlessOtherwiseNoted) C PARAMETERS/TESTCONDITIONS SYMBOL LIMITS UNIT GateSourceVoltage V 20 V GS T =25C 20 C ContinuousDrainCurrent I D T =100C 15 C A 1 PulsedDrainCurrent I 80 DM AvalancheCurrent I 12 AS L=0.1mH,ID=12A,RG=25 AvalancheEnergy E 7.2 AS mJ 2 RepetitiveAvalancheEnergy L=0.05mH E 3.6 AR T =25C 21 C PowerDissipation P W D T =100C 8.3 C T =25C 2.5 A PowerDissipation P W D T =100C 1 A OperatingJunction&StorageTemperatureRange T,T55to150 C j stg THERMALRESISTANCERATINGS THERMALRESISTANCE SYMBOL TYPICAL MAXIMUM UNIT JunctiontoCase R 6 JC C/W 3 JunctiontoAmbient R 50 JA 1 Pulsewidthlimitedbymaximumjunctiontemperature. 2 Dutycycle 1 3 2 50C/Wwhenmountedona1in padof2ozcopper. 2013/8/16 p.1EMB09N03V ELECTRICALCHARACTERISTICS(T =25C,UnlessOtherwiseNoted) C LIMITS UNIT PARAMETER SYMBOL TESTCONDITIONS MIN TYP MAX STATIC DrainSourceBreakdownVoltage V 30 V V =0V,I =250 A (BR)DSS GS D GateThresholdVoltage V V =V ,I =250 A 1 1.5 3 GS(th) DS GS D GateBodyLeakage I V =0V,V =20V 100 nA GSS DS GS ZeroGateVoltageDrainCurrent I V =24V,V =0V 1 A DSS DS GS V =20V,V =0V,T =125C 25 DS GS J 1 OnStateDrainCurrent I V =10V,V =10V 20 A D(ON) DS GS 1 DrainSourceOnStateResistance R V =10V,I =12A 7.5 9 DS(ON) GS D m V =4.5V,I =8A 10 13.5 GS D 1 ForwardTransconductance g V =5V,I =12A 20 S fs DS D DYNAMIC InputCapacitance C 828 iss V =0V,V =15V,f=1MHz GS DS pF OutputCapacitance C 196 oss ReverseTransferCapacitance C 174 rss GateResistance R V =15mV,V =0V,f=1MHz 1.7 g GS DS 1,2 TotalGateCharge Q (V =10V) 17.6 g GS V =15V,V =10V, DS GS Q (V =4.5V) 12 g GS nC I =12A D 1,2 GateSourceCharge Q 2.8 gs 1,2 GateDrainCharge Q 7.4 gd 1,2 TurnOnDelayTime t 8 d(on) 1,2 RiseTime t V =15V, 15 r DS nS 1,2 TurnOffDelayTime t I =1A,V =10V,R =6 20 d(off) D GS GS 1,2 FallTime t 20 f SOURCEDRAINDIODERATINGSANDCHARACTERISTICS(T =25C) C ContinuousCurrent I 3.5 S A 3 PulsedCurrent I 14 SM 1 ForwardVoltage V I =I ,V =0V 1.2 V SD F S GS ReverseRecoveryTime t 22 nS rr PeakReverseRecoveryCurrent I I =I ,dl /dt=100A/ S 50 A RM(REC) F S F ReverseRecoveryCharge Q 12 nC rr 2013/8/16 p.2