EMB17A03G DualNChannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: BVDSS 30V RDSON(MAX.) 17m ID 10A UIS,Rg100%Tested PbFreeLeadPlating&HalogenFree ABSOLUTEMAXIMUMRATINGS(T =25CUnlessOtherwiseNoted) A PARAMETERS/TESTCONDITIONS SYMBOL LIMITS UNIT GateSourceVoltage V 20 V GS T =25C 10 A ContinuousDrainCurrent I D T =100C 7 A A 1 PulsedDrainCurrent I 40 DM AvalancheCurrent I 12 AS AvalancheEnergy L=0.1mH,ID=10A,RG=25 E 5 AS mJ 2 RepetitiveAvalancheEnergy L=0.05mH E 2.5 AR T =25C 2 A PowerDissipation P W D T =100C 0.8 A OperatingJunction&StorageTemperatureRange T,T55to150 C j stg 100%UIStestinginconditionofV =15V,L=0.1mH,V =10V,I =7.5A,RatedV =30VNCH D G L DS THERMALRESISTANCERATINGS THERMALRESISTANCE SYMBOL TYPICAL MAXIMUM UNIT JunctiontoCase R 25 JC C/W 3 JunctiontoAmbient R 62.5 JA 1 Pulsewidthlimitedbymaximumjunctiontemperature. 2 Dutycycle 1 3 2 62.5C/Wwhenmountedona1in padof2ozcopper. 2012/08/15 p.1EMB17A03G ELECTRICALCHARACTERISTICS(T =25C,UnlessOtherwiseNoted) A LIMITS UNIT PARAMETER SYMBOL TESTCONDITIONS MIN TYP MAX STATIC DrainSourceBreakdownVoltage V 30 V V =0V,I =250 A (BR)DSS GS D GateThresholdVoltage V V =V ,I =250 A 1 1.5 3 GS(th) DS GS D GateBodyLeakage I V =0V,V =20V 100 nA GSS DS GS ZeroGateVoltageDrainCurrent I V =24V,V =0V 1 A DSS DS GS V =20V,V =0V,T =125C 25 DS GS J 1 OnStateDrainCurrent I V =10V,V =10V 10 A D(ON) DS GS 1 DrainSourceOnStateResistance R V =10V,I =10A 14.5 17 DS(ON) GS D m V =4.5V,I =6A 21 26 GS D 1 ForwardTransconductance g V =5V,I =10A 18 S fs DS D DYNAMIC InputCapacitance C 597 iss V =0V,V =15V,f=1MHz GS DS pF OutputCapacitance C 111 oss ReverseTransferCapacitance C 96 rss GateResistance R V =15mV,V =0V,f=1MHz 2.0 g GS DS 1,2 TotalGateCharge Q (V =10V) 14 g GS V =15V,V =10V, DS GS Q (V =4.5V) 7.8 g GS nC I =10A D 1,2 GateSourceCharge Q 1.8 gs 1,2 GateDrainCharge Q 4.7 gd 1,2 TurnOnDelayTime t 11 d(on) 1,2 RiseTime t V =15V, 16 r DS nS 1,2 TurnOffDelayTime t I =1A,V =10V,R =6 36 d(off) D GS GS 1,2 FallTime t 20 f SOURCEDRAINDIODERATINGSANDCHARACTERISTICS(T =25C) C ContinuousCurrent I 2.3 S A 3 PulsedCurrent I 9.2 SM 1 ForwardVoltage V I =I ,V =0V 1.2 V SD F S GS ReverseRecoveryTime t 50 nS rr PeakReverseRecoveryCurrent I I =I ,dl /dt=100A/ S 30 A RM(REC) F S F ReverseRecoveryCharge Q 2 nC rr 2012/08/15 p.2