Product Information

EMB17A03G

Product Image X-ON

Datasheet
MOSFET 2 N Channel(Double) 30V 10A 3V @ 250uA 17mO @ 10A,10V SOP8 RoHS
Manufacturer: EMC



Price (USD)

1: USD 0.3546 ea
Line Total: USD 0.3546

0 - Global Stock
MOQ: 1 Multiples:1
Pack Size :   1
Availability Price Quantity
0 - Global Stock


Ships to you between
Wed. 12 Apr to Mon. 17 Apr

MOQ : 1
Multiples : 1
1 : USD 0.3546
10 : USD 0.2883
30 : USD 0.2599
100 : USD 0.2245
500 : USD 0.2086
1000 : USD 0.1821

     
Manufacturer
EMC
Product Category
MOSFET
Category
MOSFET
Rohs
y
Package
SOP8
Brand Category
Emc
Fet Type
2 N Channel(Double)
Drain To Source Voltagevdss
30 V
Continuous Drain Current Id @ 25°C
10 A
Vgsth Max @ Id
3V @ 250uA
Rds On Max @ Id Vgs
17mO @ 10A,10V
Power Dissipation-Max Ta 25°C
2 W
Drain Source Voltage Vdss
30 V
Continuous Drain Current Id
10 A
Power Dissipation Pd
2 W
Drain Source On Resistance Rdson@Vgs Id
17 mOhms @10V , 10A
Gate Threshold Voltage Vgsth@Id
3 V @250uA
Type
2 N - Channel
Show Stocked Products With Similar Attributes. LoadingGif
Image Description
Stock Image EMF20A02G
MOSFET 2 N Channel(Double) 20V 6A 1.2V @ 250uA 20mO @ 6A,4.5V SOP8 RoHS
Stock : 0
Stock Image EMB20P03G
MOSFET P Channel 30V 10A(Tc) 3V @ 250uA 20mO @ 10A,10V SOP8 RoHS
Stock : 0
Stock Image EMB20N03V
MOSFET N Channel 30V 12A(Tc) 3V @ 250uA 20mO @ 8A,10V EDFN3*3 RoHS
Stock : 0
Stock Image EMB17C03G
MOSFET N & P Channel 30V 10A(Tc),8(Tc) 3V @ 250uA 17mO @ 10A,10V;20mO @ 8A,10V SOP8 RoHS
Stock : 0
Stock Image EMB22A04G
MOSFET 2 N Channel(Double) 40V 8A(Tc) 3V @ 250uA 22mO @ 8A,10V SOP8 RoHS
Stock : 0
Stock Image EMF20B02V
MOSFET 2 P Channel(Double) 20V 8.5A 1.2V @ 250uA 20mO @ 8.5A,4.5V EDFN3*3 RoHS
Stock : 0
Stock Image EMBA5P06J
MOSFET P Channel 60V 2.2A 3V @ 250uA 150mO @ 2A,10V SOT23 RoHS
Stock : 0
Stock Image EMB20P03V
MOSFET P Channel 30V 18A(Tc) 3V @ 250uA 20mO @ 10A,10V EDFN3*3 RoHS
Stock : 0
Stock Image EMF02P02H
MOSFET P Channel 20V 100A(Tc) 1.2V @ 250uA 2.7mO @ 20A,10V EDFN5x6 RoHS
Stock : 0
Stock Image EMF03N02HR
MOSFET N Channel 20V 71A(Tc) 1V @ 250uA 3.8mO @ 15A,10V EDFN5x6 RoHS
Stock : 0
Image Description
Stock Image EMB12P03V

MOSFET P Channel 30V 21A 3V @ 250uA 12mO @ 13A,10V EDFN3*3 RoHS
Stock : 0

Stock Image SVF4N65CAM

MOSFET N Channel 650V 4A(Tc) 4V @ 250uA 2.7O @ 2A,10V TO-251D-3L RoHS
Stock : 4

Stock Image CS5N20A4

MOSFET N Channel 200V 4.8A(Tc) 4V @ 250uA 650mO @ 2.9A,10V TO-252-2 RoHS
Stock : 0

Stock Image CS4N80A4HD-G

MOSFET N Channel 800V 4A(Tc) 4V @ 250uA 2.8O @ 2A,10V TO-252-2 RoHS
Stock : 0

Stock Image EMB03N03HR

MOSFET N Channel 30V 75A(Tc) 3V @ 250uA 3mO @ 30A,10V EDFN5*6 RoHS
Stock : 0

Stock Image EMB20P03V

MOSFET P Channel 30V 18A(Tc) 3V @ 250uA 20mO @ 10A,10V EDFN3*3 RoHS
Stock : 0

Stock Image IPD60R400CE

MOSFET CONSUMER
Stock : 2430

Stock Image JMTL3415K

MOSFET P Channel 20V 4A(Tc) 1V @ 250uA 48mO @ 4A,4.5V SOT-23 RoHS
Stock : 0

Stock Image TX15N10

MOSFET N Channel 100V 15A(Tc) 3V @ 250uA 100mO @ 8A,10V TO-252 RoHS
Stock : 1161

Stock Image VSI080N06MS

MOSFET N Channel 60V 15A 3V @ 250uA 80mO @ 10A,10V;100mO @ 5A,4.5V TO-251-S RoHS
Stock : 0

EMB17A03G DualNChannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: BVDSS 30V RDSON(MAX.) 17m ID 10A UIS,Rg100%Tested PbFreeLeadPlating&HalogenFree ABSOLUTEMAXIMUMRATINGS(T =25CUnlessOtherwiseNoted) A PARAMETERS/TESTCONDITIONS SYMBOL LIMITS UNIT GateSourceVoltage V 20 V GS T =25C 10 A ContinuousDrainCurrent I D T =100C 7 A A 1 PulsedDrainCurrent I 40 DM AvalancheCurrent I 12 AS AvalancheEnergy L=0.1mH,ID=10A,RG=25 E 5 AS mJ 2 RepetitiveAvalancheEnergy L=0.05mH E 2.5 AR T =25C 2 A PowerDissipation P W D T =100C 0.8 A OperatingJunction&StorageTemperatureRange T,T55to150 C j stg 100%UIStestinginconditionofV =15V,L=0.1mH,V =10V,I =7.5A,RatedV =30VNCH D G L DS THERMALRESISTANCERATINGS THERMALRESISTANCE SYMBOL TYPICAL MAXIMUM UNIT JunctiontoCase R 25 JC C/W 3 JunctiontoAmbient R 62.5 JA 1 Pulsewidthlimitedbymaximumjunctiontemperature. 2 Dutycycle 1 3 2 62.5C/Wwhenmountedona1in padof2ozcopper. 2012/08/15 p.1EMB17A03G ELECTRICALCHARACTERISTICS(T =25C,UnlessOtherwiseNoted) A LIMITS UNIT PARAMETER SYMBOL TESTCONDITIONS MIN TYP MAX STATIC DrainSourceBreakdownVoltage V 30 V V =0V,I =250 A (BR)DSS GS D GateThresholdVoltage V V =V ,I =250 A 1 1.5 3 GS(th) DS GS D GateBodyLeakage I V =0V,V =20V 100 nA GSS DS GS ZeroGateVoltageDrainCurrent I V =24V,V =0V 1 A DSS DS GS V =20V,V =0V,T =125C 25 DS GS J 1 OnStateDrainCurrent I V =10V,V =10V 10 A D(ON) DS GS 1 DrainSourceOnStateResistance R V =10V,I =10A 14.5 17 DS(ON) GS D m V =4.5V,I =6A 21 26 GS D 1 ForwardTransconductance g V =5V,I =10A 18 S fs DS D DYNAMIC InputCapacitance C 597 iss V =0V,V =15V,f=1MHz GS DS pF OutputCapacitance C 111 oss ReverseTransferCapacitance C 96 rss GateResistance R V =15mV,V =0V,f=1MHz 2.0 g GS DS 1,2 TotalGateCharge Q (V =10V) 14 g GS V =15V,V =10V, DS GS Q (V =4.5V) 7.8 g GS nC I =10A D 1,2 GateSourceCharge Q 1.8 gs 1,2 GateDrainCharge Q 4.7 gd 1,2 TurnOnDelayTime t 11 d(on) 1,2 RiseTime t V =15V, 16 r DS nS 1,2 TurnOffDelayTime t I =1A,V =10V,R =6 36 d(off) D GS GS 1,2 FallTime t 20 f SOURCEDRAINDIODERATINGSANDCHARACTERISTICS(T =25C) C ContinuousCurrent I 2.3 S A 3 PulsedCurrent I 9.2 SM 1 ForwardVoltage V I =I ,V =0V 1.2 V SD F S GS ReverseRecoveryTime t 50 nS rr PeakReverseRecoveryCurrent I I =I ,dl /dt=100A/ S 30 A RM(REC) F S F ReverseRecoveryCharge Q 2 nC rr 2012/08/15 p.2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
EMC
Excelliance MOS Co., Ltd.