EMB17C03G N&PChannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: NCH PCH BVDSS 30V30V 17m 20m RDSON(MAX.) ID 10A8A UIS,Rg100%Tested PbFreeLeadPlating&HalogenFree ABSOLUTEMAXIMUMRATINGS(T =25CUnlessOtherwiseNoted) C PARAMETERS/TESTCONDITIONS SYMBOL LIMITS UNIT GateSourceVoltage V NCH PCH V GS 20 20 T =25C 108 C ContinuousDrainCurrent I D T =100C 76 C A 1 PulsedDrainCurrent I 4032 DM AvalancheCurrent I 1010 AS L=0.1mH,ID=8A,RG=25(N) AvalancheEnergy E 3.2 2.45 AS mJ L=0.1mH,ID=7A,RG=25(P) 2 RepetitiveAvalancheEnergy L=0.05mH E 1.6 1.23 AR T =25C 2 C PowerDissipation P W D T =100C 0.8 C OperatingJunction&StorageTemperatureRange T,T55to150 C j stg 100%UIStestinginconditionofV =15V,L=0.1mH,V =10V,I =8A,RatedV =30VNCH D G L DS 100%UIStestinginconditionofV =15V,L=0.1mH,V =10V,I =7A,RatedV =30VPCH D G L DS THERMALRESISTANCERATINGS THERMALRESISTANCE SYMBOL TYPICAL MAXIMUM UNIT JunctiontoCase 25 R JC C/W 3 JunctiontoAmbient R 62.5 JA 203/1/10 p.1EMB17C03G 1 Pulsewidthlimitedbymaximumjunctiontemperature. 2 Dutycycle 1 3 2 62.5C/Wwhenmountedona1in padof2ozcopper. ELECTRICALCHARACTERISTICS(T =25C,UnlessOtherwiseNoted) C LIMITS UNIT PARAMETER SYMBOL TESTCONDITIONS MIN TYP MAX STATIC DrainSourceBreakdownVoltage V NCH 30 V V =0V,I =250 A (BR)DSS GS D PCH30 V =0V,I =250 A GS D GateThresholdVoltage V V =V ,I =250 A NCH 1 1.5 3 GS(th) DS GS D PCH11.5 3 V =V ,I =250 A DS GS D GateBodyLeakage I V =0V,V =20V NCH 100 nA GSS DS GS V =0V,V =20V PCH 100 DS GS ZeroGateVoltageDrainCurrent I V =24V,V =0V NCH 1 A DSS DS GS V =24V,V =0V PCH 1 DS GS V =20V,V =0V,T =125C NCH 25 DS GS J V =20V,V =0V,T =125C PCH 25 DS GS J 1 OnStateDrainCurrent I V =10V,V =10V NCH 10 A D(ON) DS GS V =5V,V =10V PCH8 DS GS 1 DrainSourceOnStateResistance R V =10V,I =10A NCH 14.5 17 DS(ON) GS D m V =10V,I =8A PCH 17.5 20 GS D V =4.5V,I =6A NCH 21 26 GS D V =4.5V,I =6A PCH 26 35 GS D 1 ForwardTransconductance g V =5V,I =10A NCH 18 S fs DS D V =5V,I =8A PCH 24 DS D DYNAMIC InputCapacitance C NCH NCH 597 iss V =0V,V =15V,f=1MHz GS DS pF PCH 1407 P=CH OutputCapacitance C NCH 111 oss V =0V,V =15V,f=1MHz GS DS PCH 208 ReverseTransferCapacitance C NCH 96 rss PCH 164 203/1/10 p.2