EMB20P03G PChannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: D BVDSS30V RDSON(MAX.) 20m ID10A G S UIS,Rg100%Tested PbFreeLeadPlating&HalogenFree ABSOLUTEMAXIMUMRATINGS(T =25CUnlessOtherwiseNoted) A PARAMETERS/TESTCONDITIONS SYMBOL LIMITS UNIT GateSourceVoltage V 25 V GS T =25C 10 C ContinuousDrainCurrent I D T =100C8 C A 1 PulsedDrainCurrent I40 DM AvalancheCurrent I15 AS AvalancheEnergy L=0.1mH,ID=10A,RG=25 E 5 AS mJ 2 RepetitiveAvalancheEnergy L=0.05mH E 2.5 AR T =25C 2.5 A PowerDissipation P W D T =100C 1 A OperatingJunction&StorageTemperatureRange T,T55to150 C j stg 100%UIStestinginconditionofV =15V,L=0.1mH,V =10V,I =10A,RatedV =30VPCH D G L DS THERMALRESISTANCERATINGS THERMALRESISTANCE SYMBOL TYPICAL MAXIMUM UNIT JunctiontoCase R 25 JC C/W 3 JunctiontoAmbient R 50 JA 1 Pulsewidthlimitedbymaximumjunctiontemperature. 2 Dutycycle 1 3 2 50C/Wwhenmountedona1in padof2ozcopper. 2013/9/18 p.1EMB20P03G ELECTRICALCHARACTERISTICS(T =25C,UnlessOtherwiseNoted) A LIMITS UNIT PARAMETER SYMBOL TESTCONDITIONS MIN TYP MAX STATIC DrainSourceBreakdownVoltage V 30 V V =0V,I =250 A (BR)DSS GS D GateThresholdVoltage V V =V ,I =250 A 11.5 3 GS(th) DS GS D GateBodyLeakage I V =0V,V =20V 100 nA GSS DS GS V =0V,V =25V 500 DS GS ZeroGateVoltageDrainCurrent I V =24V,V =0V1 A DSS DS GS V =20V,V =0V,T =125C 10 DS GS J 1 OnStateDrainCurrent I V =5V,V =10V10 A D(ON) DS GS 1 DrainSourceOnStateResistance R V =10V,I =10A 17.5 20 DS(ON) GS D m V =4.5V,I =7A 26 35 GS D 1 ForwardTransconductance g V =5V,I =10A 24 S fs DS D DYNAMIC InputCapacitance C 1407 iss V =0V,V =15V,f=1MHz GS DS pF OutputCapacitance C 208 oss ReverseTransferCapacitance C 164 rss GateResistance R V =15mV,V =0V,f=1MHz 4.5 g GS DS 1,2 TotalGateCharge Q (V =10V) 20.3 g GS V =15V,V =10V, DS GS Q (V =4.5V) 9.8 g GS nC I =10A D 1,2 GateSourceCharge Q 3.2 gs 1,2 GateDrainCharge Q 4.9 gd 1,2 TurnOnDelayTime t 10 d(on) 1,2 RiseTime t V =15V, 8 r DS nS 1,2 TurnOffDelayTime t I =1A,V =10V,R =2.7 25 d(off) D GS GS 1,2 FallTime t 6 f SOURCEDRAINDIODERATINGSANDCHARACTERISTICS(T =25C) C ContinuousCurrent I 3 S A 3 PulsedCurrent I 12 SM 1 ForwardVoltage V I =I ,V =0V1.2 V SD F S GS ReverseRecoveryTime t I =I ,dl /dt=100A/ S 32 nS rr F S F ReverseRecoveryCharge Q 26 nC rr 2013/9/18 p.2