EMF20A02G DualNChannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: BVDSS 20V RDSON(MAX.) 20m ID 6A UIS100%Tested PbFreeLeadPlating&HalogenFree ABSOLUTEMAXIMUMRATINGS(T =25CUnlessOtherwiseNoted) A PARAMETERS/TESTCONDITIONS SYMBOL LIMITS UNIT GateSourceVoltage V 12 V GS T =25C 6 A ContinuousDrainCurrent I D T =100C 4 A A 1 PulsedDrainCurrent I 24 DM AvalancheCurrent I 10 AS AvalancheEnergy L=0.1mH,ID=10A,RG=25 E 5 AS mJ 2 RepetitiveAvalancheEnergy L=0.05mH E 2.5 AR T =25C 2 A PowerDissipation P W D T =100C 0.8 A OperatingJunction&StorageTemperatureRange T,T55to150 C j stg 100%UIStestinginconditionofV =10V,L=0.1mH,V =4.5V,I =6A,RatedV =20VNCH D G L DS THERMALRESISTANCERATINGS THERMALRESISTANCE SYMBOL TYPICAL MAXIMUM UNIT JunctiontoCase R 25 JC C/W 3 JunctiontoAmbient R 62.5 JA 1 Pulsewidthlimitedbymaximumjunctiontemperature. 2 Dutycycle 1 3 2 62.5C/Wwhenmountedona1in padof2ozcopper. 2013/1/11 p.1EMF20A02G ELECTRICALCHARACTERISTICS(T =25C,UnlessOtherwiseNoted) C LIMITS UNIT PARAMETER SYMBOL TESTCONDITIONS MIN TYP MAX STATIC DrainSourceBreakdownVoltage V 20 V V =0V,I =250 A (BR)DSS GS D GateThresholdVoltage V V =V ,I =250 A 0.45 0.8 1.2 GS(th) DS GS D GateBodyLeakage I V =0V,V =12V 100 nA GSS DS GS ZeroGateVoltageDrainCurrent I V =16V,V =0V 1 A DSS DS GS V =16V,V =0V,T =125C 25 DS GS J 1 OnStateDrainCurrent I V =5V,V =4.5V 6 A D(ON) DS GS 1 DrainSourceOnStateResistance R V =4.5V,I =6A 17 20 DS(ON) GS D m V =2.5V,I =5A 23 28 GS D 1 ForwardTransconductance g V =5V,I =6A 8 S fs DS D DYNAMIC InputCapacitance C 560 iss V =0V,V =10V,f=1MHz GS DS pF OutputCapacitance C 166 oss ReverseTransferCapacitance C 150 rss 1,2 TotalGateCharge Q V =10V,V =4.5V, 8.5 g DS GS 1,2 I =6A D GateSourceCharge Q 1.5 gs nC 1,2 GateDrainCharge Q 3.5 gd 1,2 TurnOnDelayTime t 12 d(on) 1,2 RiseTime t V =10V, 15 r DS nS 1,2 TurnOffDelayTime t I =1A,V =4.5V,R =6 30 d(off) D GS GS 1,2 FallTime t 13 f SOURCEDRAINDIODERATINGSANDCHARACTERISTICS(T =25C) C ContinuousCurrent I 2.3 S A 3 PulsedCurrent I 9.2 SM 1 ForwardVoltage V I =I ,V =0V 1.2 V SD F S GS 1 Pulsetest:PulseWidth 300 sec,DutyCycle2. 2 Independentofoperatingtemperature. 3 Pulsewidthlimitedbymaximumjunctiontemperature. 2013/1/11 p.2