Product Information

EMF20B02V

Product Image X-ON

Datasheet
MOSFET 2 P Channel(Double) 20V 8.5A 1.2V @ 250uA 20mO @ 8.5A,4.5V EDFN3*3 RoHS
Manufacturer: EMC



Price (USD)

1: USD 0.4864 ea
Line Total: USD 0.4864

0 - Global Stock
MOQ: 1 Multiples:1
Pack Size :   1
Availability Price Quantity
0 - Global Stock


Ships to you between
Wed. 12 Apr to Mon. 17 Apr

MOQ : 1
Multiples : 1
1 : USD 0.4864
10 : USD 0.3901
30 : USD 0.349
100 : USD 0.2974
500 : USD 0.2658
1000 : USD 0.252

     
Manufacturer
EMC
Product Category
MOSFET
Category
MOSFET
Rohs
y
Package
EDFN3*3
Brand Category
Emc
Fet Type
2 P Channel(Double)
Drain To Source Voltagevdss
20 V
Continuous Drain Current Id @ 25°C
8.5 A
Vgsth Max @ Id
1.2V @ 250uA
Rds On Max @ Id Vgs
20mO @ 8.5A,4.5V
Power Dissipation-Max Ta 25°C
2 W
Drain Source Voltage Vdss
20 V
Continuous Drain Current Id
8.5 A
Power Dissipation Pd
2 W
Drain Source On Resistance Rdson@Vgs Id
20 mOhms @4.5V , 8.5A
Gate Threshold Voltage Vgsth@Id
1.2 V @250uA
Type
2 P - Channel
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EMF20B02V PChannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: BVDSS20V RDSON(MAX.) 20m ID8.5A PbFreeLeadPlating&HalogenFree ABSOLUTEMAXIMUMRATINGS(T =25CUnlessOtherwiseNoted) A PARAMETERS/TESTCONDITIONS SYMBOL LIMITS UNIT GateSourceVoltage V 12 V GS T =25C 8.5 A ContinuousDrainCurrent I D T =70C6 A A 1 PulsedDrainCurrent I34 DM T =25C 2 A PowerDissipation P W D T =70C 1.28 A OperatingJunction&StorageTemperatureRange T,T55to150 C j stg THERMALRESISTANCERATINGS THERMALRESISTANCE SYMBOL TYPICAL MAXIMUM UNIT JunctiontoCase R 25 JC C/W 3 JunctiontoAmbient 62.5 R JA 1 Pulsewidthlimitedbymaximumjunctiontemperature. 2 Dutycycle 1 3 2 62.5C/Wwhenmountedona1in padof2ozcopper. 2013/1/10 p.1EMF20B02V ELECTRICALCHARACTERISTICS(T =25C,UnlessOtherwiseNoted) A LIMITS UNIT PARAMETER SYMBOL TESTCONDITIONS MIN TYP MAX STATIC DrainSourceBreakdownVoltage V 20 V V =0V,I =250 A (BR)DSS GS D GateThresholdVoltage V V =V ,I =250 A 0.40.75 1.2 GS(th) DS GS D GateBodyLeakage I V =0V,V =12V 100 nA GSS DS GS ZeroGateVoltageDrainCurrent I V =16V,V =0V1 A DSS DS GS V =12V,V =0V,T =125C 10 DS GS J 1 OnStateDrainCurrent I V =5V,V =4.5V8.5 A D(ON) DS GS 1 DrainSourceOnStateResistance R V =4.5V,I =8.5A 15 20 DS(ON) GS D m V =2.5V,I =4.5A 19 25 GS D V =1.8V,I =2.5A 26 40 GS D 1 ForwardTransconductance g V =5V,I =8.5A 22 S fs DS D DYNAMIC InputCapacitance C 3050 iss V =0V,V =10V,f=1MHz GS DS pF OutputCapacitance C 460 oss ReverseTransferCapacitance C 410 rss 1,2 TotalGateCharge Q (V =4.5V) 27 g GS V =10V,V =4.5V, DS GS Q (V =2.5V) 16.5 g GS nC I =8.5A D 1,2 GateSourceCharge Q 2.2 gs 1,2 GateDrainCharge Q 6.8 gd 1,2 TurnOnDelayTime t 20 d(on) 1,2 RiseTime t V =10V, 50 r DS nS 1,2 TurnOffDelayTime t I =1A,V =4.5V,R =6 90 d(off) D GS GS 1,2 FallTime t 60 f SOURCEDRAINDIODERATINGSANDCHARACTERISTICS(T =25C) C ContinuousCurrent I 2.3 S A 3 PulsedCurrent I 9.2 SM 1 ForwardVoltage V I =I ,V =0V1.2 V SD F S GS 1 Pulsetest:PulseWidth 300 sec,DutyCycle2. 2 Independentofoperatingtemperature. 3 Pulsewidthlimitedbymaximumjunctiontemperature. 2013/1/10 p.2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
EMC
Excelliance MOS Co., Ltd.