EMF20B02V PChannelLogicLevelEnhancementModeFieldEffectTransistor ProductSummary: BVDSS20V RDSON(MAX.) 20m ID8.5A PbFreeLeadPlating&HalogenFree ABSOLUTEMAXIMUMRATINGS(T =25CUnlessOtherwiseNoted) A PARAMETERS/TESTCONDITIONS SYMBOL LIMITS UNIT GateSourceVoltage V 12 V GS T =25C 8.5 A ContinuousDrainCurrent I D T =70C6 A A 1 PulsedDrainCurrent I34 DM T =25C 2 A PowerDissipation P W D T =70C 1.28 A OperatingJunction&StorageTemperatureRange T,T55to150 C j stg THERMALRESISTANCERATINGS THERMALRESISTANCE SYMBOL TYPICAL MAXIMUM UNIT JunctiontoCase R 25 JC C/W 3 JunctiontoAmbient 62.5 R JA 1 Pulsewidthlimitedbymaximumjunctiontemperature. 2 Dutycycle 1 3 2 62.5C/Wwhenmountedona1in padof2ozcopper. 2013/1/10 p.1EMF20B02V ELECTRICALCHARACTERISTICS(T =25C,UnlessOtherwiseNoted) A LIMITS UNIT PARAMETER SYMBOL TESTCONDITIONS MIN TYP MAX STATIC DrainSourceBreakdownVoltage V 20 V V =0V,I =250 A (BR)DSS GS D GateThresholdVoltage V V =V ,I =250 A 0.40.75 1.2 GS(th) DS GS D GateBodyLeakage I V =0V,V =12V 100 nA GSS DS GS ZeroGateVoltageDrainCurrent I V =16V,V =0V1 A DSS DS GS V =12V,V =0V,T =125C 10 DS GS J 1 OnStateDrainCurrent I V =5V,V =4.5V8.5 A D(ON) DS GS 1 DrainSourceOnStateResistance R V =4.5V,I =8.5A 15 20 DS(ON) GS D m V =2.5V,I =4.5A 19 25 GS D V =1.8V,I =2.5A 26 40 GS D 1 ForwardTransconductance g V =5V,I =8.5A 22 S fs DS D DYNAMIC InputCapacitance C 3050 iss V =0V,V =10V,f=1MHz GS DS pF OutputCapacitance C 460 oss ReverseTransferCapacitance C 410 rss 1,2 TotalGateCharge Q (V =4.5V) 27 g GS V =10V,V =4.5V, DS GS Q (V =2.5V) 16.5 g GS nC I =8.5A D 1,2 GateSourceCharge Q 2.2 gs 1,2 GateDrainCharge Q 6.8 gd 1,2 TurnOnDelayTime t 20 d(on) 1,2 RiseTime t V =10V, 50 r DS nS 1,2 TurnOffDelayTime t I =1A,V =4.5V,R =6 90 d(off) D GS GS 1,2 FallTime t 60 f SOURCEDRAINDIODERATINGSANDCHARACTERISTICS(T =25C) C ContinuousCurrent I 2.3 S A 3 PulsedCurrent I 9.2 SM 1 ForwardVoltage V I =I ,V =0V1.2 V SD F S GS 1 Pulsetest:PulseWidth 300 sec,DutyCycle2. 2 Independentofoperatingtemperature. 3 Pulsewidthlimitedbymaximumjunctiontemperature. 2013/1/10 p.2