Product Information

FIR12N60FG

FIR12N60FG electronic component of First Semicon

MOSFET N Trench 600V 13A (Tc) 4V @ 250uA 650 mΩ @ 6.5A,10V TO-220F (TO-220IS) RoHS

Manufacturer: First Semicon
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.8473 ea
Line Total: USD 0.85

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you between
Fri. 03 May to Wed. 08 May

MOQ : 1
Multiples : 1

Stock Image

FIR12N60FG
First Semicon

1 : USD 0.8473
10 : USD 0.7012
30 : USD 0.594
100 : USD 0.5088
500 : USD 0.4918
1000 : USD 0.4845

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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The First Semicon FIR12N60FG is a MOSFET N Trench 600V 13A (Tc) 4V @ 250uA 650 mOhm @ 6.5A, 10V TO-220F (TO-220IS) RoHS in a TO-220F package. It is a fast switching, low-on-resistance MOSFET, designed for use in high-performing power electronic systems. The device has a total gate charge (Qg) of 12nC and a lock-up voltage (Vgs) of 8.7V. It features excellent output characteristics, low input gate-source capacitance, and low gate charge. With a maximum junction temperature (Tj) of 175°C, it is an ideal choice for high voltage applications. It is RoHS compliant and is suitable for use in a wide range of applications including switching power supplies, motor, lighting, and other industrial applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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