X-On Electronics has gained recognition as a prominent supplier of 2SA812G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SA812G Bipolar Transistors - BJT are a product manufactured by Galaxy. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SA812G Galaxy

Name: 2SA812G
Brand: Galaxy
SKU: 2SA812G_Galaxy
Availability: OutOfStock
Rating: 5 (11 reviews)

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See Product Specifications

Part No.	2SA812G
Manufacturer:	Galaxy
Category:	Bipolar Transistors - BJT
Description:	Transistors (NPN/PNP) PNP 100mA 50V SOT-23 RoHS
Datasheet:	2SA812G Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

50: USD 0.0146 ea
Line Total: USD 0.73

Availability - 0

MOQ: 50 Multiples: 50
Pack Size: 50

2SA812G More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Wed. 09 Jul to Mon. 14 Jul MOQ : 50 Multiples : 50	50 : USD 0.0146 500 : USD 0.0114 3000 : USD 0.0096 6000 : USD 0.0085 24000 : USD 0.0076 51000 : USD 0.0071

Specifications

Manufacturer Galaxy Galaxy
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT
Category Bipolar Transistors-BJT Bipolar Transistors-BJT
Rohs y y
Package SOT - 23 SOT - 23
Brand Category Galaxy Galaxy
Transistor Type pnp pnp
Current - Collector Ic Max 100 mA 100 mA
Voltage - Collector Emitter Breakdown Max 50 V 50 V
Power - Max 200 mW 200 mW
Collector Cut-Off Current Icbo 100 nA 100 nA
Collector-Emitter Breakdown Voltage Vceo 50 V 50 V
Power Dissipation Pd 200 mW 200 mW
Collector Current Ic 100 mA 100 mA
Dc Current Gain Hfe@Ic Vce - -
Transition Frequency Ft 180MHz 180MHz
Collector-Emitter Saturation Voltage Vcesat@Ic Ib 180 mV @100 mA , 10 mA 180 mV @100 mA , 10 mA
Operating Temperature - 55 C ~ + 150 C @ (Tj) - 55 C ~ + 150 C @ (Tj)

We are delighted to provide the 2SA812G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SA812G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

The 2SA812G is a PNP type transistor manufactured by Galaxy. It is a 2-pin SOT-23 Surface Mount Transistor and is RoHS compliant. It has an operating voltage of 50V and can handle up to 100mA of current. It is an NPN/PNP (not an N-channel or P-channel) transistor and is designed for switching or amplification purposes. This transistor is usually used in small signal circuits, such as those found in radios, alarms, and amplifiers. It is also suitable for use in drivers and inverters due to its low operating voltage and low gate threshold voltage.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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