GS-065-060-3-B-MR Gan Systems

GS-065-060-3-B 650 V E-mode GaN transistor Datasheet Features 650 V enhancement mode power transistor Bottom-cooled, low inductance GaNPX package R = 25 m DS(on) I = 60 A DS(max) Ultra-low FOM Simple gate drive requirements (0 V to 6 V) Transient tolerant gate drive (-20 / +10 V) Circuit Symbol Package Outline Very high switching frequency (> 10 MHz) Fast and controllable fall and rise times top view Reverse conduction capability Zero reverse recovery loss 2 Small 11 x 9 mm footprint Dual gate pads for optimal board layout RoHS 3 (6+4) compliant The thermal pad is internally connected to Source (pad 2) and substrate Applications Description AC-DC Converters The GS-065-060-3-B is a 650 V enhancement mode DC-DC Converters GaN-on-silicon power transistor. The properties of Bridgeless Totem Pole PFC GaN allow for high current, high voltage breakdown Solar Inverters and high switching frequency. GaN Systems innovates Energy Storage Systems with industry leading advancements such as patented On Board Chargers Uninterruptable Power Supplies Island Technology and GaNPX packaging. Island Industrial Motor Drives Technology cell layout realizes high-current die and Laser Drivers high yield. GaNPX packaging enables low inductance Traction Drive & low thermal resistance in a small package. The GS- Wireless Power Transfer 065-060-3-B is a bottom-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching. Rev 220131 2009-2022 GaN Systems Inc. 1 Submit datasheet feedback GS-065-060-3-B 650 V E-mode GaN transistor Datasheet Absolute Maximum Ratings (T = 25 C except as noted) case Parameter Symbol Value Unit Operating Junction Temperature T -55 to +150 C J Storage Temperature Range T -55 to +150 C S Drain-to-Source Voltage V 650 V DS Transient Drain-to-Source Voltage (Note 1) V 900 V DS(transient) Gate-to-Source Voltage V -10 to + 7 V GS Gate-to-Source Voltage - transient (Note 1) V -20 to +10 V GS(transient) Continuous Drain Current (T =25 C) I 60 A case DS Continuous Drain Current (T =100 C) I 47 A case DS Pulse Drain Current (Pulse width 10 s, V = 6V) (Note 2) I 120 A GS DS pulse (1) For < 1 s. (2) Defined by product design and characterization. Value is not tested to full current in production. Thermal Characteristics (Typical values unless otherwise noted) Parameter Symbol Value Units Thermal Resistance (junction-to-case) bottom side R 0.27 C /W JC Maximum Soldering Temperature (MSL3 rated) T 260 C SOLD Ordering Information Packing Reel Reel Ordering code Package type Qty method Diameter Width GaNPX GS-065-060-3-B-TR Tape-and-Reel 2000 13 (330 mm) 24 mm Bottom-Side Cooled GaNPX GS-065-060-3-B-MR Mini-Reel 250 7 (180 mm) 24 mm Bottom-side Cooled Rev 220131 2009-2022 GaN Systems Inc. 2 Submit datasheet feedback