GS66508B-MR Gan Systems

GS66508B Bottom-side cooled 650 V E-mode GaN transistor Datasheet Features 650 V enhancement mode power transistor Bottom-side cooled configuration R = 50 m DS(on) I = 30 A DS(max) Ultra-low FOM die Low inductance GaNPX package Simple gate drive requirements (0 V to 6 V) Transient tolerant gate drive (-20 V / +10 V) Circuit Symbol Package Outline Very high switching frequency (> 10 MHz) Fast and controllable fall and rise times Reverse conduction capability Zero reverse recovery loss 2 Small 7.0 x 8.4 mm PCB footprint Source Sense (SS) pin for optimized gate drive RoHS 3 (6+4) compliant Applications Description AC-DC Converters The GS66508B is an enhancement mode GaN-on- DC-DC Converters silicon power transistor. The properties of GaN allow Bridgeless Totem Pole PFC for high current, high voltage breakdown and high Inverters switching frequency. GaN Systems innovates with Energy Storage Systems industry leading advancements such as patented On Board Battery Chargers Island Technology and GaNPX packaging. Island Uninterruptable Power Supplies Technology cell layout realizes high-current die and Solar Energy Industrial Motor Drives high yield. GaNPX packaging enables low inductance Appliances & low thermal resistance in a small package. The Laser Drivers GS66508B is a bottom-side cooled transistor that offers Wireless Power Transfer very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching. Rev 200402 2009-2020 GaN Systems Inc. 1 Submit datasheet feedback GS66508B Bottom-side cooled 650 V E-mode GaN transistor Datasheet Absolute Maximum Ratings (Tcase = 25 C except as noted) Parameter Symbol Value Unit Operating Junction Temperature T -55 to +150 C J Storage Temperature Range T -55 to +150 C S Drain-to-Source Voltage V 650 V DS Drain-to-Source Voltage - transient (Note 1) V 750 V DS(transient) Gate-to-Source Voltage V -10 to +7 V GS Gate-to-Source Voltage - transient (Note 1) V -20 to +10 V GS(transient) Continuous Drain Current (T = 25 C) I 30 A case DS Continuous Drain Current (T = 100 C) I 25 A case DS Pulse Drain Current (Pulse width 50 s, V = 6 V) (Note 2) I 60 A GS DS Pulse (1) For < 1 s (2) Defined by product design and characterization. Value is not tested to full current in production. Thermal Characteristics (Typical values unless otherwise noted) Parameter Symbol Value Units Thermal Resistance (junction-to-case) bottom side R 0.5 C /W JC Thermal Resistance (junction-to-ambient) (Note 3) RJA 24 C /W Maximum Soldering Temperature (MSL3 rated) T 260 C SOLD (3) Device mounted on 1.6 mm PCB thickness FR4, 4-layer PCB with 2 oz. copper on each layer. The recommendation for thermal vias under the thermal pad are 0.3 mm diameter (12 mil) with 0.635 mm pitch (25 mil). The copper layers 2 under the thermal pad and drain pad are 25 x 25 mm each. The PCB is mounted in horizontal position without air stream cooling. Ordering Information Ordering Packing Reel Reel Package type Qty code method Diameter Width GS66508B-TR GaNPX Bottom-Side Cooled Tape-and-Reel 3000 13 (330mm) 16mm GS66508B-MR GaNPX Bottom-Side Cooled Mini-Reel 250 7 (180mm) 16mm Rev 200402 2009-2020 GaN Systems Inc. 2 Submit datasheet feedback