X-On Electronics has gained recognition as a prominent supplier of G3R30MT12K SiC MOSFETs across the USA, India, Europe, Australia, and various other global locations. G3R30MT12K SiC MOSFETs are a product manufactured by GeneSiC Semiconductor. We provide cost-effective solutions for SiC MOSFETs, ensuring timely deliveries around the world.

G3R30MT12K GeneSiC Semiconductor

G3R30MT12K electronic component of GeneSiC Semiconductor
G3R30MT12K GeneSiC Semiconductor
G3R30MT12K SiC MOSFETs
G3R30MT12K  Semiconductors

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See Product Specifications
Part No. G3R30MT12K
Manufacturer: GeneSiC Semiconductor
Category: SiC MOSFETs
Description: SiC MOSFETs 1200V 30mohm TO-247-4 G3R SiC MOSFET
Datasheet: G3R30MT12K Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 23.7015 ea
Line Total: USD 23.7 
Availability - 194
Ship by Fri. 13 Jun to Tue. 17 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
194
Ship by Fri. 13 Jun to Tue. 17 Jun
MOQ : 1
Multiples : 1
1 : USD 23.7015
10 : USD 21.175
30 : USD 20.471
120 : USD 19.69
270 : USD 19.69
510 : USD 19.69
1020 : USD 19.217
2520 : USD 18.579

   
Manufacturer
Product Category
Mounting Style
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Package / Case
Hts Code
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the G3R30MT12K from our SiC MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the G3R30MT12K and other electronic components in the SiC MOSFETs category and beyond.

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TM G3R30MT12K 1200 V 30 m SiC MOSFET Silicon Carbide MOSFET VDS = 1200 V N-Channel Enhancement Mode DS(ON)(Typ.) R = 30 m ID (TC = 100C) = 50 A Features Package D G3R Technology with +15 V Gate Drive Softer RDS(ON) v/s Temperature Dependency LoRing - Electromagnetically Optimized Design G RoHS Smaller RG(INT) and Lower QG KS Low Device Capacitances (C , C ) OSS RSS S Superior Cost-Performance Index D = Drain Robust Body Diode with Low VF and Low QRR G = Gate TO-247-4 100% Avalanche (UIL) Tested S = Source REACH KS = Kelvin Source Advantages Applications Compatible with Commercial Gate Drivers Solar Inverters Low Conduction Losses at all Temperatures Motor Drives Reduced Ringing EV Charging Faster and More Efficient Switching High Voltage DC-DC Converters Lesser Switching Spikes and Lower Losses Switched Mode Power Supplies Better Power Density and System Efficiency UPS Ease of Paralleling without Thermal Runaway Smart Grid Transmission and Distribution Superior Robustness and System Reliability Induction Heating and Welding Absolute Maximum Ratings (At T = 25C Unless Otherwise Stated) C Parameter Symbol Conditions Values Unit Note Drain-Source Voltage V V = 0 V, I = 100 A 1200 V DS(max) GS D Gate-Source Voltage (Dynamic) VGS(max) -10 / +20 V Gate-Source Voltage (Static) V Recommended Operation -5 / +15 V GS(op) T = 25C, V = -5 / +15 V 70 C GS Continuous Forward Current ID TC = 100C, VGS = -5 / +15 V 50 A Fig. 15 TC = 135C, VGS = -5 / +15 V 36 Pulsed Drain Current I t 3s, D 1%, V = 15 V, Note 1 200 A Fig. 14 D(pulse) P GS Power Dissipation P T = 25C 281 W Fig. 16 D c Non-Repetitive Avalanche Energy EAS L = 2.0 mH, IAS = 22.5 A 498 mJ Operating and Storage Temperature T , T -55 to 175 C j stg Thermal/Package Characteristics Values Parameter Symbol Conditions Unit Note Min. Typ. Max. Thermal Resistance, Junction - Case R 0.42 0.53 C/W Fig. 13 thJC Weight WT 6.2 g Mounting Torque T Screws to Heatsink 1.1 Nm M Note 1: Pulse Width t Limited by T P j(max) Rev 21/May Latest Version at: www.genesicsemi.com/sic-mosfet/G3R30MT12K/G3R30MT12K.pdf Page 1 of 14TM G3R30MT12K 1200 V 30 m SiC MOSFET Electrical Characteristics (At T = 25C Unless Otherwise Stated) C Values Parameter Symbol Conditions Unit Note Min. Typ. Max. Drain-Source Breakdown Voltage V V = 0 V, I = 100 A 1200 V DSS GS D Zero Gate Voltage Drain Current I V = 1200 V, V = 0 V 1 A DSS DS GS V = 0 V, V = 20 V 100 DS GS Gate Source Leakage Current IGSS nA V = 0 V, V = -10 V -100 DS GS VDS = VGS, ID = 24.0 mA 1.8 2.70 Gate Threshold Voltage V V Fig. 9 GS(th) VDS = VGS, ID = 24.0 mA, Tj = 175C 2.05 V = 10 V, I = 45 A 20.9 DS D Transconductance g S Fig. 4 fs V = 10 V, I = 45 A, T = 175C 23.6 DS D j V = 15 V, I = 45 A 30 39 GS D Drain-Source On-State Resistance R m Fig. 5-8 DS(ON) V = 15 V, I = 45 A, T = 175C 43 GS D j Input Capacitance Ciss 3863 Output Capacitance C 117 pF Fig. 11 oss Reverse Transfer Capacitance C 9.4 rss Coss Stored Energy Eoss 45 J Fig. 12 V = 800 V, V = 0 V DS GS C Stored Charge Q 170 nC oss oss f = 1 MHz, VAC = 25mV Effective Output Capacitance (Energy Co(er) 140 Related) pF Note 2 Effective Output Capacitance (Time Co(tr) 212 Related) Gate-Source Charge Q 43 gs V = 800 V, V = -5 / +15 V DS GS Gate-Drain Charge Q I = 45 A 51 nC Fig. 10 gd D Per IEC607478-4 Total Gate Charge Q 118 g Internal Gate Resistance R f = 1 MHz, V = 25 mV 1.2 G(int) AC Turn-On Switching Energy EOn 298 (Body Diode) T = 25C, V = -5/+15V, R = 3 , L = j GS G(ext) J Fig. 22,26 40.0 H, I = 45 A, V = 800 V Turn-Off Switching Energy D DD EOff 97 (Body Diode) Turn-On Delay Time t 36 d(on) V = 800 V, V = -5/+15V DD GS Rise Time tr 11 RG(ext) = 3 , L = 40.0 H, ID = 45 A ns Fig. 24 Turn-Off Delay Time t 20 d(off) Timing relative to V , Inductive load DS Fall Time t 8 f *The chip technology was characterized up to 200 V/ns. The measured dV/dt was limited by measurement test setup and package. Note 2: C , a lumped capacitance that gives same stored energy as C while V is rising from 0 to 800V. o(er) OSS DS C , a lumped capacitance that gives same charging times as C while V is rising from 0 to 800V. o(tr) OSS DS Rev 21/May Latest Version at: www.genesicsemi.com/sic-mosfet/G3R30MT12K/G3R30MT12K.pdf Page 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
GENESIC SEMICONDUCTOR INC.
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