G3R450MT17D GeneSiC Semiconductor

Name: G3R450MT17D
Brand: GeneSiC Semiconductor
SKU: G3R450MT17D_GeneSiC_Semiconductor
Availability: InStock
Rating: 5 (11 reviews)

G3R450MT17D electronic component of GeneSiC Semiconductor

Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of G3R450MT17D SiC MOSFETs across the USA, India, Europe, Australia, and various other global locations. G3R450MT17D SiC MOSFETs are a product manufactured by GeneSiC Semiconductor. We provide cost-effective solutions for SiC MOSFETs, ensuring timely deliveries around the world.

Part No.	G3R450MT17D
Manufacturer:	GeneSiC Semiconductor
Category:	SiC MOSFETs
Description:	SiC MOSFETs 1700V 450mohm TO-247-3 G3R SiC MOSFET
Datasheet:	G3R450MT17D Datasheet (PDF)

Price (USD)

1: USD 7.8 ea
Line Total: USD 7.8

Availability : 1379

Ship by Wed. 06 Aug to Fri. 08 Aug

Qty Unit Price
1 $ 7.8
10 $ 6.27
30 $ 6.083
120 $ 5.698
270 $ 5.555
510 $ 5.379
1020 $ 5.269
2520 $ 5.049
5010 $ 4.895

G3R450MT17D More Buying Options & Price Grid(s)

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Availability

Price (USD)

Buy Price

Quantity

Availability 1379

Ship by Wed. 06 Aug to Fri. 08 Aug

MOQ : 1
Multiples : 1

Qty Unit Price
1 $ 7.8
10 $ 6.27
30 $ 6.083
120 $ 5.698
270 $ 5.555
510 $ 5.379
1020 $ 5.269
2520 $ 5.049
5010 $ 4.895

Availability 405

Ship by Wed. 06 Aug to Fri. 08 Aug

MOQ : 1
Multiples : 1

Qty Unit Price
1 $ 9.394
3 $ 7.266
8 $ 6.86

Specifications

Manufacturer

GeneSiC Semiconductor GeneSiC Semiconductor

Product Category

SiC MOSFETs SiC MOSFETs

Mounting Style

Through Hole Through Hole

Transistor Polarity

N - Channel N - Channel

Number of Channels

1 Channel 1 Channel

Vds - Drain-Source Breakdown Voltage

1.7 kV 1.7 kV

Id - Continuous Drain Current

7 A 7 A

Rds On - Drain-Source Resistance

450 mOhms 450 mOhms

Vgs - Gate-Source Voltage

- 5 V , + 15 V - 5 V , + 15 V

Vgs th - Gate-Source Threshold Voltage

2.7 V 2.7 V

Qg - Gate Charge

13 nC 13 nC

Minimum Operating Temperature

- 55 C - 55 C

Maximum Operating Temperature

+ 175 C + 175 C

Pd - Power Dissipation

70 W 70 W

Channel Mode

Enhancement Enhancement

Package / Case

TO - 247 - 3 TO - 247 - 3

Notes:- Show Stocked Products With Similar Attributes.

G3R450MT17D Alternative Parts

We are delighted to provide the G3R450MT17D from our SiC MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the G3R450MT17D and other electronic components in the SiC MOSFETs category and beyond.

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Additional Infomation About Product

The G3R450MT17D with MOSFET 1700V 450mO TO-247-3 G3R SiC MOSFET is a 1700-volt, 3-pin vertical MOSFET with a 45-milliohm nominal on-resistance, that was manufactured by GeneSiC Semiconductor. This particular SiC MOSFET has a high temperature, high-power output, and can operate in high-frequency switching applications. It has a temperature rating of up to 175°C, and is designed to provide high current with low dropout voltage and minimal power dissipation. It also has high breakdown voltage, low gate leakage current, and low noise levels. The G3R450MT17D is suitable for use in automotive, industrial, and telecom applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Qty	Unit Price
1	$ 7.8
10	$ 6.27
30	$ 6.083
120	$ 5.698
270	$ 5.555
510	$ 5.379
1020	$ 5.269
2520	$ 5.049
5010	$ 4.895

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