Product Information

HP640

HP640 electronic component of Haolin

Datasheet
MOSFET N Trench 200V 18A (Tc) 4V @ 250uA 150 mΩ @ 9A,10V TO-220 RoHS
Manufacturer: Haolin
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5308 ea
Line Total: USD 0.53

57 - Global Stock
Ships to you between
Thu. 02 May to Tue. 07 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
57 - Global Stock


Ships to you between
Thu. 02 May to Tue. 07 May

MOQ : 1
Multiples : 1

Stock Image

HP640
Haolin

1 : USD 0.513
10 : USD 0.4143
30 : USD 0.371
100 : USD 0.3137
500 : USD 0.2901
1000 : USD 0.2762

Read More Specifications

     
Manufacturer
Product Category
Brand
Rohs
Package
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta 25°C
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

The HP640 MOSFET N Trench 200V 18A (Tc) 4V @ 250uA manufactured by Haolin is a high performance MOSFET transistor capable of handling a wide range of voltages and current loads. It features a maximum drain-source voltage of 200V, a drain current of 18A (Tc) 4V @ 250uA, a maximum gate-source voltage of 10V and a thermal resistance of 150 mO at 9A. Its package style is TO-220 and it is certified RoHS (Restriction of Hazardous Substances) compliant.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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