Product Information

HA9N90

HA9N90 electronic component of HL

Datasheet
MOSFET N Trench 900V 9A (Tc) 4.5V @ 250uA 1.4 Ω @ 4.5A,10V TO-3P RoHS

Manufacturer: HL
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.2282 ea
Line Total: USD 1.2282

21 - Global Stock
Ships to you between
Fri. 12 Apr to Wed. 17 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
21 - Global Stock


Ships to you between
Fri. 12 Apr to Wed. 17 Apr

MOQ : 1
Multiples : 1
1 : USD 1.293
10 : USD 1.0675
30 : USD 0.9386
90 : USD 0.827
600 : USD 0.7603
900 : USD 0.726

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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SupremesThe HA9N90 with MOSFET N Trench 900V 9A (Tc) 4.5V @ 250uA 1.4 O @ 4.5A, 10V TO-3P RoHS is a metal oxide semiconductor field effect transistor (MOSFET) made by HL Supremes. This product is designed to help regulate power flow between two electrical circuits. The 900V 9A can handle bigger wattages than low-voltage transistors and has little to no losses due to its low on resistance. It also has a 4.5V gate threshold voltage and can operate with current sustained of 250uA and a maximum of 4.5A. Lastly, it comes in the standard 10V TO-3P RoHS package and, RoHS standards for reduced hazardous substances in electrical and electronic parts.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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